Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis

Oldani, Luca; Rossetti, M.; Alagi, Filippo; Atzeni, Laura; Borella, Fabio; Brazzelli, Silvia

doi:10.1109/tdmr.2022.3163537

IEEE Trans. Device Mater. Relib.

2022

DOI: 10.1109/tdmr.2022.3163537

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Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis

Luca Oldani

M. Rossetti

Filippo Alagi

et al.

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Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis

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