Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures

Jabbari, Iraj; Baïra, M.; Maâref, H.; Mghaieth, Ridha

doi:10.1016/j.ssc.2020.113920

Cited by 24 publications

(22 citation statements)

References 31 publications

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“…The effective Schottky barrier heights of Samples A and B are at the same level as former reports. [29,30] Higher barrier heights account for a lower gate leakage, which is in accordance with Figure 3.…”

Section: Comparison Of Gate Leakage Current Of Different Devicessupporting

confidence: 88%

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Zhen

Wang

Qin

et al. 2022

Physica Status Solidi (a)

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GaN-based high-electron-mobility transistors (HEMTs) have emerged as a promising candidate for next-generation high-efficiency power electronics including high-frequency power amplifiers and high-voltage power switches. [1] However, reliability problems such as gate leakage current and current collapse are the main issues that limit the performance of AlGaN/GaN HEMTs. [2] The common way to reduce the current collapse of devices is to grow a SiN x as a passivation layer. [3] Nevertheless, a detrimental rise in leakage current may be caused by fabrication damages. [4,5] Remote inductively coupled plasma chemical vapor deposition (ICP-CVD) [6] and low-pressure chemical vapor deposition (LPCVD) [7] techniques have been proposed for damage-free passivation. However, these techniques require longer time, higher cost, and higher temperature. [1] It is still a challenge to obtain lower gate leakage and lower current collapse simultaneously.

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Section: Comparison Of Gate Leakage Current Of Different Devicessupporting

confidence: 88%

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Zhen

Wang

Qin

et al. 2022

Physica Status Solidi (a)

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“…Because the Fowler-Nordheim mechanism seems to work in a temperature range of 60 K to 320 K for AlGaN/ GaN HEMTs [12], this is the only mechanism that will be considered in this study. The field emission current density is [20]…”

Section: Theorymentioning

confidence: 99%

“…For HEMT heterostructures grown on a GaN substrate with an i-GaN cap, a theoretical calculation based on hot-electron emission, hot-electron field emission, and field emission can comprehensively explain current-voltage characteristics [11]. For AlGaN/GaN HEMTs, the Fowler-Nordheim mechanism seems to work within temperature range of 60 K to 320 K, and the gate leakage current is dominated by the formation of a triangular barrier [12]. The gate leakage current can redistribute the gate voltage of the power p-GaN gate HEMTs [13].…”

mentioning

confidence: 99%

Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

Mao¹

2022

ETRI Journal

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Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

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“…Bulk limited is that mechanism where the bulk of the insulating material has a dominating role Poole-Frenkel and hopping. While electrode limited are those where electrode material has a dominating role tunneling (direct, Fowler Nordheim (F-N), trap assisted tunneling TAT) [11,12].…”

Section: Theory Of Conduction Mechanism In Electronic Devicesmentioning

confidence: 99%

“…For tunneling process, current density J is expressed in terms of electric field, barrier height, effective electron mass as [12,14];…”

Section: Tunneling Processmentioning

confidence: 99%

Electrical Transport and Current Conduction Mechanisms in ZnO/Si Heterojunction Diode

Benhaliliba

2021

Int. J. Robot. Autom. Technol.

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The objective of this research is the relevant equations of electrical transport inside a junction device based on metallic oxides like zinc oxides retained on silicon substrate by spray pyrolysis process. Many characteristics, such as the heterojunction diode's non-ideal conduct, electronic conduction of electrons and gaps in the conduction and valence bands, charge carriers caught by trap centers, hopping conduction, and tunnel effect, are used in various conduction processes at electronic junctions. Poole-Frenkel (PF) emission, Schottky emissions, and trap aided tunneling are some of the other conduction mechanisms examined inside forward/reverse bias for ZnO/Si heterojunctions (TAT). This article also confirms, addresses, and elucidates the effect of temperature on the I-V properties of ZnO/Si. https://ecee.colorado.edu/~bart/book/book/chapter3/ch3_9.htm

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Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures

Cited by 24 publications

References 31 publications

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Comparative Study on Characteristics of AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors

Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

Electrical Transport and Current Conduction Mechanisms in ZnO/Si Heterojunction Diode

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