Evidence of the Ferroelectric Polarization in Charge Transport through WTe2 Weyl Semimetal Surface

Орлова, Н. Н.; Ryshkov, N. S.; Timonina, A. V.; Kolesnikov, N. N.; Deviatov, E. V.

doi:10.1134/s0021364021060011

Cited by 11 publications

(33 citation statements)

References 32 publications

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“…The spontaneous polarization of ferroelectric domains was found to be bistable, it can be affected by high external electric field. The possibility to induce polarization current by source-drain field variation has been shown for WTe2 as a direct consequence of ferroelectricity and metallic conductivity coexistence [28]. We have demonstrated qualitatively similar ferroelectric behavior of dV/dI(I) curves for thin SnSe flakes [23], as it is shortly shown in the present text as small hysteresis for V 1ω xx (I) in the upper inset to Fig.…”

Section: Discussionsupporting

confidence: 84%

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Thermoelectric response as a tool to observe electrocaloric effect in a thin conducting ferroelectric SnSe flake

Orlova,

Timonina,

Kolesnikov

et al. 2021

Preprint

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We experimentally investigate thermoelectric response of a 100 nm thick SnSe single crystal flake under the current-induced dc electric field. Thermoelectric response appears as a second-harmonic transverse voltage V 2ω xy , which reflects temperature gradient across the sample due to the Joule heating by harmonic ac excitation current Iac. In addition to strongly non-monotonous dependence V 2ωxy , we observe that dc field direction controls the sign of the temperature gradient in the SnSe flake. We provide arguments, that electrocaloric effect is the mostly probable reason for the results obtained. Thus, our experiment can be understood as demonstration of the possibility to induce electrocaloric effect by in-plane electric field in conducting ferroelectric crystals and to detect it by thermoelectric response.

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Section: Discussionsupporting

confidence: 84%

“…Upper inset demonstrates first-harmonic longitudinal V 1ω xx component, which reflects sample differential resistance. Two curves are shown for two opposite sweep directions, which reflects ferroelectric hysteresis, see Ref [28]. for details.…”

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confidence: 99%

Thermoelectric response as a tool to observe electrocaloric effect in a thin conducting ferroelectric SnSe flake

Orlova,

Timonina,

Kolesnikov

et al. 2021

Preprint

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“…Also, standard oxidized silicon substrate allows to apply the gate voltage V g to the p-doped silicon across the 100 nm oxide layer. Even for relatively thick (100-200 nm) flakes, ferroelectric polarization is sensitive to the gate electric field [14], since the relevant (bottom) flake surfaces are adjoined to the SiO 2 surface. ) Inset shows an enlarged low-bias region with small hysteresis around the zero bias, which is known for the individual WTe2 or SnSe flakes [14][15][16].…”

Section: Samples and Techniquesmentioning

confidence: 99%

“…Even for relatively thick (100-200 nm) flakes, ferroelectric polarization is sensitive to the gate electric field [14], since the relevant (bottom) flake surfaces are adjoined to the SiO 2 surface. ) Inset shows an enlarged low-bias region with small hysteresis around the zero bias, which is known for the individual WTe2 or SnSe flakes [14][15][16]. (b,c) Gate voltage dependence of the dI/dV (V ) regions near positive and the negative thresholds.…”

Section: Samples and Techniquesmentioning

confidence: 99%

“…Manipulation of charge transport by ferroelectric polarization is important for ferroelectric fieldeffect transistors (FeFET), as it has been demonstrated for In 2 Se 3 -based structures [2]. Ferroelectric polarization can be controlled also by the in-plane current-induced electric field in WTe 2 and SnSe thin films [14][15][16]. Van der Waals materials also offer strain control of ferroelectric polarization [17].…”

Section: Introductionmentioning

confidence: 99%

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Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe$_2$

Orlova,

Timonina,

Kolesnikov

et al. 2022

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The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe2 heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals materials with different polarization directions. WTe2 is a polar metal with out-of-plane ferroelectric polarization, while SnSe ferroelectric semiconductor is polarized in-plane, so one should expect complicated polarization structure at the SnSe/WTe2 interface. We study dI/dV (V ) curves, which demonstrate sharp symmetric drop to zero dI/dV differential conductance at some threshold bias voltages ±V th , which are nearly symmetric in respect to the bias sign. While the gate electric field is too small to noticeably affect the carrier concentration, the positive and negative threshold positions are sensitive to the gate voltage. Also, SnSe/WTe2 heterostructure shows re-entrant transition to the low-conductive dI/dV = 0 state for abrupt change of the bias voltage even below the threshold values. This behavior can not be observed for single SnSe or WTe2 flakes, so we interpret it as a result of the SnSe/WTe2 interface coupling. In this case, some threshold value of the electric field at the SnSe/WTe2 interface is enough to drive 90 • change of the initial SnSe in-plane polarization in the overlap region. The polarization mismatch leads to the significant interface resistance contribution, analogously to the scattering of the charge carriers on the domain walls. Thus, we demonstrate polarization state control by electron transport through the SnSe/WTe2 interface.

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Dynamic negative capacitance response in GeTe Rashba ferroelectric

Орлова

Timonina

Kolesnikov

et al. 2022

Physica B: Condensed Matter

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Evidence of the Ferroelectric Polarization in Charge Transport through WTe2 Weyl Semimetal Surface

Cited by 11 publications

References 32 publications

Thermoelectric response as a tool to observe electrocaloric effect in a thin conducting ferroelectric SnSe flake

Thermoelectric response as a tool to observe electrocaloric effect in a thin conducting ferroelectric SnSe flake

Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe$_2$

Dynamic negative capacitance response in GeTe Rashba ferroelectric

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