2023
DOI: 10.1021/acs.jpcc.3c01844
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Evidence of Topological Phase Transition with Excellent Catalytic Activity in the AgCaAs Heusler Alloy: A First-Principles Investigation

Bhautik R. Dhori,
Darshil Chodvadiya,
Prafulla K. Jha

Abstract: Topological insulators are centered on the objective that a spin-locked surface state exhibits exceptional spin transport properties with an insulating bulk. In the present work, we predict biaxial strain-induced topological phase transition in the noncentrosymmetric compound AgCaAs, using first-principles calculations. Under ambient conditions, bulk AgCaAs exhibits a trivial nature with an insulating gap; however, on applying biaxial strain the system exhibits Dirac semimetallic behavior, indicating toward to… Show more

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Cited by 8 publications
(4 citation statements)
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“…6 Specifically, 2D-DMs with strong spin–orbit coupling (SOC) are an excellent choice to understand low-energy fermionic excitations, and provide an encouraging platform to intertwine spins and valleys. In this regard, SOC influences electronic band structure, from which DMs can be divided into three different classes: (i) SOC-induced non-trivial-energy-gap materials, classified into “quantum spin Hall insulators” and “quantum anomalous Hall phases”, which boast many exceptional properties, including dissipationless edge current with time-reversal-symmetry protected helical edge states; 7–9 (ii) Dirac points that are robust against SOC due to a nonsymmorphic space group; 10,11 (iii) a new type of DMs known as spin–valley-coupled Dirac semimetals (svc-DSMs), which have been recently proposed. 12 These compounds have two inequivalent but degenerate valley states that carry information.…”
Section: Introductionmentioning
confidence: 99%
“…6 Specifically, 2D-DMs with strong spin–orbit coupling (SOC) are an excellent choice to understand low-energy fermionic excitations, and provide an encouraging platform to intertwine spins and valleys. In this regard, SOC influences electronic band structure, from which DMs can be divided into three different classes: (i) SOC-induced non-trivial-energy-gap materials, classified into “quantum spin Hall insulators” and “quantum anomalous Hall phases”, which boast many exceptional properties, including dissipationless edge current with time-reversal-symmetry protected helical edge states; 7–9 (ii) Dirac points that are robust against SOC due to a nonsymmorphic space group; 10,11 (iii) a new type of DMs known as spin–valley-coupled Dirac semimetals (svc-DSMs), which have been recently proposed. 12 These compounds have two inequivalent but degenerate valley states that carry information.…”
Section: Introductionmentioning
confidence: 99%
“…If the strength of intrinsic SOC is not enough to realize the topological phases, external parameters such as pressure, electric field, chemical doping, etc., are used to achieve the topological phase transition (TPT). ,, Among others, pressure is an efficient way to induce the TPT as it circumvents the defects and inhomogeneity of doping . In fact, pressure-induced TPTs have been previously observed in BiTeI, Pb 1– x Sn x Se, NaBaBi, rocksalt chalcogenides, layered materials, Sb 2 Se 3 , AgCaAs, KZnAs, etc. At ambient conditions, surface states of TIs are investigated using experimental techniques like angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy .…”
Section: Introductionmentioning
confidence: 99%
“…Sb 2 Se 3 ,24 AgCaAs,25 KZnAs,26 etc. At ambient conditions, surface states of TIs are investigated using experimental techniques like angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy.…”
mentioning
confidence: 99%
“…Hence, ABO HH oxides can be realised in three different phases (α-, β-, and γ-) owing to the presence of three non-equivalent atomic arrangements within the unit cell [27]. These three distinct phases correspond to C1 b structure [28,29]. Such compounds are unique for example, the atomic arrangement of non-magnetic elements can lead to a magnetic ordering in the compound [30].…”
Section: Introductionmentioning
confidence: 99%