“…If the strength of intrinsic SOC is not enough to realize the topological phases, external parameters such as pressure, electric field, chemical doping, etc., are used to achieve the topological phase transition (TPT). ,, Among others, pressure is an efficient way to induce the TPT as it circumvents the defects and inhomogeneity of doping . In fact, pressure-induced TPTs have been previously observed in BiTeI, Pb 1– x Sn x Se, NaBaBi, rocksalt chalcogenides, layered materials, Sb 2 Se 3 , AgCaAs, KZnAs, etc. At ambient conditions, surface states of TIs are investigated using experimental techniques like angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy .…”