Evidence of Weak Localization in a Two-Dimensional Electron Gas from Studies of Pressure-Induced Semimetal?Semiconductor?Insulator Transitions in GaSb/InAs/GaSb Quantum Wells

Dizhur, E. M.; Voronovsky, A. N.

doi:10.1002/(sici)1521-3951(199901)211:1<449::aid-pssb449>3.0.co;2-c

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“…The negative MR at low field may result from the quantum effects, such as the weak localization and electron-electron interactions. In fact, this phenomenon has been reported extensively in 2D electronic systems [36][37][38][39]. For instances, it has been shown that when hydrostatic pressure was applied to induce the phase transition in the GaSb/InAs/GaSb system, a negative MR would emerge as a result of weak localization in this 2D system [36,37].…”

Section: Transport Properties Of (Alga)sb/inas 2degmentioning

confidence: 82%

“…In fact, this phenomenon has been reported extensively in 2D electronic systems [36][37][38][39]. For instances, it has been shown that when hydrostatic pressure was applied to induce the phase transition in the GaSb/InAs/GaSb system, a negative MR would emerge as a result of weak localization in this 2D system [36,37]. Moreover, as observed in the GaN/(Al,Ga)N 2DEG, the electron-electron interactions could also induce a negative MR, which even existed when the magnetic field was increased to 15 T [38,39].…”

Section: Transport Properties Of (Alga)sb/inas 2degmentioning

confidence: 86%

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Ga composition effects on the electrical parameters of (Al,Ga)Sb/InAs two-dimensional electron gas

Wei

Wang

Tong

et al. 2020

Semicond. Sci. Technol.

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The effects of Ga composition on the electrical parameters of (Al,Ga)Sb/InAs two-dimensional electron gas have been investigated. The (Al,Ga)Sb/InAs structures are grown on GaAs (001) substrate by molecular-beam epitaxy with various Ga compositions in Al1−x Ga x Sb bottom barrier. The sheet resistance shows a crossover with the variation of temperature, and the temperature T* corresponding to this crossover decreases with increasing the Ga composition. The temperature dependence of the electron mobility is similar for the samples with different Ga compositions, while the temperature dependence of the carrier density is obviously different. Qualitative analyses reveal that the temperature dependent portion of carrier density is mainly determined by the interface-related donors. A thermal activation model is used to fit the temperature dependence of carrier density, and the fitting results imply that the thermal activation energies of the carriers are significantly affected by the Ga composition. Our results provide useful information for understanding the sources of carriers in the (Al,Ga)Sb/InAs systems, and provide one pathway for the modulation of the temperature dependent carrier density.

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