Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

Sato, Taketomo; Tamai, Isao; Yoshida, Seiichiro; Hasegawa, Hideki

doi:10.1016/j.apsusc.2004.05.018

Cited by 11 publications

(16 citation statements)

References 5 publications

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“…The latter case indicates that the growth rate of GaN on the top facet is much larger than that on the side facet. This is very similar to the case of growth on GaAs (001) and (111)B patterned substrates [6].…”

Section: Growth Selectivity On Patterned Substratessupporting

confidence: 69%

“…In these methods, control of size and position seems to be very difficult. On the other hand, we have shown that selective molecular beam epitaxy (MBE) growth on a prepatterned substrate is a very powerful approach for the formation of high-density quantum nanostructures for GaAs-and InP-based materials [5][6][7] with tight control of both position and size.…”

Section: Introductionmentioning

confidence: 99%

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Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

Sato

Oikawa

Hasegawa

2005

Jpn. J. Appl. Phys.

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The feasibility of the selective molecular beam epitaxy (MBE) growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates is investigated. The detailed studies on growth features have revealed that size-reducing selective growth is possible on mesa patterns having the <11-20>-orientation, but not on those having the <1-100>-orientations. The behavior reflects complex growth kinetics on high-index crystalline facets. The lateral wire width of QWR structures formed selectively on a top mesa can be controlled by adjusting the growth thickness and the initial size of mesa patterns. From cathodoluminescence (CL) measurements, emission from the embedded AlGaN/GaN QWR structure has been clearly identified. KEYWORDS: selective growth, molecular beam epitaxy (MBE), patterned substrates, GaN, AlGaN IntroductionRecently, the AlGaN/GaN system has been opened up and has led to the establishment of blue/UV photonic and high-power electronic device application areas. This material system, however, is potentially suitable for not only these areas but also for high-operating-temperature quantum devices such as quantum-wire transistors (QWR-Trs) and single-electron transistors (SETs). This is due to wide energy gaps with a large E c and to the availability of high-density two dimensional electron gases (2DEGs) even under non-doped conditions which avoids the doping fluctuation problem commonly observed in nanometer-scale devices. Here, a key question is how to form the AlGaN/GaN-based nanostructures in a size-and position-controlled manner. Recent studies on the fabrication of GaN-based quantum structures have been mostly focused on the self-assembled formation of quantum dots (QDs) using the Stranski-Krastanov mode [1,2] or anti-surfactant methods [3,4]. In these methods, control of size and position seems to be very difficult. On the other hand, we have shown that selective molecular beam epitaxy (MBE) growth on a prepatterned substrate is a very powerful approach for the formation of high-density quantum nanostructures for with tight control of both position and size.The purpose of this study is to investigate the basic behavior and feasibility of the selective MBE growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates for the first time. For this purpose, GaN and AlGaN layers were grown by rf-radical-assisted MBE growth. Through growth on planar GaN (0001) substrates, the basic growth conditions were optimized using in situ reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) analyses. Then, selective growth experiments were

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Section: Growth Selectivity On Patterned Substratessupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

Sato

Oikawa

Hasegawa

2005

Jpn. J. Appl. Phys.

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“…As for growth on the ͑001͒ substrate, these boundaries are planes and the lateral wire width of QWRs, W, is determined by two facet boundary planes ͑FBPs͒ which form a constant angle b with respect to the flat ͑001͒ plane. It has been found in previous experiments 21 that these boundary planes do not correspond to any particular crystalline facets that are activated during the growth. In fact, they were found to depend strongly on the growth temperature T sub .…”

Section: B Wire Cross-sections and Facet Boundariesmentioning

confidence: 99%

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Sato¹,

Tamai²,

Hasegawa³

2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The growth kinetics involved in the selective molecular beam epitaxy growth of GaAs quantum wires ͑QWRs͒ on mesa-patterned substrates is investigated in detail experimentally, and an attempt is made to model the growth theoretically, using a phenomenological continuum model. Experimentally, ͗Ϫ110͘-oriented QWRs were grown on ͑001͒ and ͑113͒A substrates, and ͗Ϫ1Ϫ12͘-oriented QWRs were grown on ͑111͒B substrates. From a detailed investigation of the growth profiles, it was found that the lateral wire width is determined by facet boundaries ͑FBs͒ within AlGaAs layers separating growth regions on top facets from those on side facets of mesa structures. Evolution of FBs during growth was complicated. For computer simulation, measured growth rates of various facets were fitted into a theoretical formula to determine the dependence of a lifetime of adatoms on the slope angle of the growing surface. The continuum model using the slope angle dependent lifetime reproduced the details of the experimentally observed growth profiles very well for growth on ͑001͒, ͑113͒A, and ͑111͒B substrates, including the complex evolution of facet boundaries

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“…Each stripe had flat and smooth side facets. These features are suitable for the selective MBE growth of QWR structures [5]. An example of the cross-sectional SEM image of a fabricated substrate pattern is shown in Fig.3.…”

Section: >-And <11mentioning

confidence: 99%

“…However, position-and size-controllability is rather poor in these growth modes. On the other hand, we have shown that the selective molecular beam epitaxy (MBE) growth on a pre-patterned substrate is a very powerful approach for formation of position-and size-controlled high density quantum nanostructures on GaAs and InP substrates [4,5].…”

Section: Introductionmentioning

confidence: 99%

Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

Oikawa

Ishikawa

Sato

et al. 2005

Applied Surface Science

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Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy

Cited by 11 publications

References 5 publications

Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates

Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates

Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

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