Employing a systematic first-principles investigation with crystal structure searching based on an evolutionary algorithm, we have uncovered the novel phase (P4 2 /nmc) of OsB 4 with a novel superhardness and semiconducting state. In this investigation, metal-to-semiconductor phase transition is predicted at only a few gigapascals above ambient pressure, i.e., 11 GPa. As a result, the P4 2 /nmc phase should potentially become a metastable phase at ambient pressure. The Vickers (polycrystalline) hardness and the band gap of the semiconducting phase are calculated to be 60 GPa and 2.90 eV, respectively. These findings indicate that the P4 2 /nmc phase might be a promising superhard-semiconducting material which could be used in cutting and drilling tools, material coating, and other advanced optical technologies. Moreover, under further compression up to 300 GPa, the semiconducting phase transforms into a metallic P6 3 /mmc phase at 134 GPa, and then another predicted metallic phase with a Cmca symmetry emerges beyond 270 GPa. Both dynamic and elastic stabilities are fully investigated to ensure the existence of the predicted phases.