2009
DOI: 10.1016/j.tsf.2009.03.041
|View full text |Cite
|
Sign up to set email alerts
|

Evolution of composition distribution of Si-capped Ge islands on Si(001)

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
4
0

Year Published

2011
2011
2017
2017

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 11 publications
(4 citation statements)
references
References 16 publications
0
4
0
Order By: Relevance
“…The quantitative threedimensional (3D) compositional profiles of GeSi QDs were recently reported by Rastelli et al by AFM imaging of the same QDs combined with selective chemical etching [13]. The composition distribution of GeSi QRs has been experimentally probed by XRD or AFM imaging combined with selective chemical etching [14][15][16], where the results were obtained by averaging over a statistical ensemble of QRs or neglecting the QR-to-QR variations. Therefore to our knowledge, no quantitative 3D compositional profiles obtained on single GeSi QRs have been reported.…”
Section: Introductionmentioning
confidence: 95%
See 1 more Smart Citation
“…The quantitative threedimensional (3D) compositional profiles of GeSi QDs were recently reported by Rastelli et al by AFM imaging of the same QDs combined with selective chemical etching [13]. The composition distribution of GeSi QRs has been experimentally probed by XRD or AFM imaging combined with selective chemical etching [14][15][16], where the results were obtained by averaging over a statistical ensemble of QRs or neglecting the QR-to-QR variations. Therefore to our knowledge, no quantitative 3D compositional profiles obtained on single GeSi QRs have been reported.…”
Section: Introductionmentioning
confidence: 95%
“…To realize these applications, it is essential to have good understanding of their composition distributions and electrical properties. Up to now, various methods have been employed to investigate the composition distributions of GeSi quantum structures [5][6][7][8][9][10][11][12][13][14][15][16], such as anomalous x-ray diffraction (XRD) [6,7], cross-sectional transmission electron microscopy (TEM) [8,9], tip-enhanced Raman spectroscopy [10], and atomic force microscopy (AFM) combined with selective chemical etching [11][12][13][14][15][16]. However, most of the research dealt with the composition distributions of GeSi QDs [6][7][8][9][10][11][12], and the results were usually obtained by averaging over an ensemble of QDs or limited to cross-sectional or surface profiles.…”
Section: Introductionmentioning
confidence: 99%
“…[13][14][15] Many different isocompositional profiles have been discovered and explained by different island-formation mechanisms. [16][17][18] In this work, utilizing this technique, we observed that the etched Ge/Si/Ge islands exhibited pyramid structures, which differed from the ring-like isocompositional profiles observed in conventional Ge islands. We attempt to elucidate the possible islandformation mechanism on the basis of low surface diffusivity and strain adjustment of the thin Si layer in composite islands.…”
mentioning
confidence: 79%
“…It has been concluded from experimental observations 11,13,19,30 that capping Ge islands with Si leads to an increased Si incorporation in the islands and promotes island flattening. Using atomic force microscopy (AFM) and transmission electron microscopy (TEM), Lee et al 19 concluded that islands buried with Si exhibit a Ge-rich core surrounded by a Si-rich environment.…”
mentioning
confidence: 99%