“…Y 2 O 3 has been regarded as one of the most promising candidates for the dielectric for AOS TFTs devices as a consequence of its particular physical properties, such as thermally and chemically stable, low leakage current, high refractive index (~2), wide band gap (5.5eV), relatively high dielectric constant (14~18), and relatively high band offsets (2.3eV) with respect to silicon [12,13]. Several techniques have been employed to fabricate the Y 2 O 3 thin films, including sputtering [10,[15][16][17][18][19][20][21], solution process [11-12, 14, 18], pulsed laser deposition [13,22], molecular beam epitaxy [23], atomic layer deposition [24], ion beam assisted deposition [25], plasma-enhanced chemical vapor deposition [26], and electron-beam deposition [27]. Among these deposition techniques, solution process may reduce equipment costs, decrease the surface roughness, and increase the uniformity of the thin films [12].…”