Evolution of copper–hydrogen-related defects in silicon

Knack, S.; Weber, J.; Lemke, Heinz U.; Riemann, H.

doi:10.1016/s0921-4526(01)00763-3

Cited by 34 publications

(30 citation statements)

References 18 publications

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“…The associated hole level is located at E v + 0.185 eV. 15 Recent ab initio calculations suggest that the Cu * center consists of a substitutional Cu atom with an interstitial Cu atom located near the third-neighbor tetrahedral site. 16 This assignment disagrees with published uniaxial stress perturbations of the line, but those data were measured only for low stresses and they are not fully understood.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved free-electron laser spectroscopy of a copper isoelectronic center in silicon

et al. 2005

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Time-resolved "two color" photoluminescence is reported from the 944 meV band produced by a low concentration of copper in silicon. Photoluminescence has been generated by a pulsed pump beam, and then partially quenched by a probe beam from a free-electron laser. The kinetics of the quenching allow the absorption cross section for photoionization of the center to be determined without knowing its concentration in the sample. The time-resolved data demonstrate a partial recovery of the luminescence after photoionization, due to repopulation of the ionized traps.

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Section: Introductionmentioning

confidence: 99%

Time-resolved free-electron laser spectroscopy of a copper isoelectronic center in silicon

et al. 2005

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“…Bottom: Calculated DLTS peaks, based on data given in Ref. [16] for dislocation-free p-type Si contaminated with Cu.…”

Section: Dlts Spectra Of Copper Contaminated Samplementioning

confidence: 99%

Recombination activity and electrical levels of “clean” and copper contaminated dislocations in p‐type Si

Vyvenko

Kittler²,

Seifert³

et al. 2005

phys. stat. sol. (c)

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Deep levels, associated with misfit dislocations in "clean" and copper contaminated p-type Si/Si 0.98 Ge 0.02 /Si structures, are under consideration. In the as-grown (non-contaminated) samples dislocations were found to exhibit a very low recombination activity, detectable with the electron-beam-induced current technique only at low temperatures. Deep-level-transient spectroscopy revealed a dislocationrelated hole trap level at E t = E v + 0.2 eV which was identified as band-like. The position of the observed level is close to the theoretically predicted hole trap state of the intrinsic stacking fault between a dissociated dislocation. Contamination with a low copper concentration (5 ppb) gave rise to a large increase of the recombination activity of the dislocations and to the appearance of another dislocation-related defect level at E t = E v + 0.32 eV. Hydrogenation of the copper contaminated sample by a treatment with an acid solution and subsequent reverse-bias anneal at 380 K resulted in the evolution of the levels of substitutional copper and its complexes with hydrogen.

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“…* Cu 0 is seen in samples with low copper concentrations, 17 in samples annealed at high temperatures, 20,21 and in dislocated samples. 20 The * Cu 0 PL band sometimes coexists with that of the ͕Cu s ,Cu i ͖ pair in the same sample. The role of dislocations in the formation of * Cu 0 is unclear.…”

mentioning

confidence: 97%

“…19 The 944 meV band appears to be associated with a DLTS level at E v + 0.185 eV. 20,23 The * Cu 0 defect is longlived at room temperature. In melt-doped samples with high concentrations of Cu s , etched with a Cu-containing solution, the concentrations of both * Cu 0 and ͕Cu s ,Cu i ͖ pairs ͑as measured by DLTS͒ decrease with depth while the concentration of isolated Cu s increases with depth.…”

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confidence: 99%

Cu0*: A metastable configuration of the{Cus,Cui}

2005

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First-principles theory shows that the substitutional-interstitial copper pair in Si ͑Si-Cu s¯C u i ͒ has a metastable state with Cu i very near a tetrahedral interstitial site in a trigonal Cu s -Si¯Cu i configuration that exhibits three low-frequency pseudolocal vibrational modes. The lowest of them, at 40 cm −1 , has A 1 symmetry and is the likely source of the phonon sidebands observed at 52 cm −1 in the photoluminescence band of a defect known as * Cu 0 .

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Evolution of copper–hydrogen-related defects in silicon

Cited by 34 publications

References 18 publications

Time-resolved free-electron laser spectroscopy of a copper isoelectronic center in silicon

Time-resolved free-electron laser spectroscopy of a copper isoelectronic center in silicon

Recombination activity and electrical levels of “clean” and copper contaminated dislocations in p‐type Si

Cu0*: A metastable configuration of the{Cus,Cui}

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