Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

Zhang, J.; Li, X. F.; Lu, J. G.; Wu, Pengcheng; Huang, J.; Wang, Qiang; Lü, Bin; Zhang, Y. Z.; Zhao, Bin; Ye, Z. Z.

doi:10.1063/1.4711046

Cited by 12 publications

(2 citation statements)

References 17 publications

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“…An enhancement in the electrical conductivity, i.e., a reduction in the resistivity, of the 7% and 9% In-doped ZnO semiconductors is the most likely explanation for these higher off-state currents. Note that a back-channel current conduction between source and drain electrodes in bottom-gate/top-contact structured TFTs, which is not controlled by V G , will dominate the off-state current when the resistivity of the channel layer is too low [ 32 , 33 ]. Previous studies have reported that the ideal resistivity of ZnO films for application in TFTs is about 10 5 –10 6 Ωcm [ 34 , 35 ].…”

Section: Resultsmentioning

confidence: 99%

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

et al. 2017

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We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

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Section: Resultsmentioning

confidence: 99%

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

et al. 2017

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“…Zinc oxide (ZnO) is a promising n-type semiconductor material that is used in a wide range of applications, such as gas detection [1,2,3,4], dye-sensitized solar cells [5,6,7], antibacterial surface coatings [8], light-emitting diodes (LEDs) [9,10], nanopower generators [11], ultraviolet (UV) detection [12,13,14,15], and photocatalytic applications [16,17,18]. ZnO nanostructures have a direct wide band gap (3.37 eV) [19], chemical stability [20], optical [21], piezoelectric [22,23,24], and electrical [25] properties. Additionally, ZnO possesses piezoelectric properties and self-carrier generation when tensile strain force is applied or substrates are bent [26].…”

Section: Introductionmentioning

confidence: 99%

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

et al. 2019

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Zinc oxide/reduced graphene oxide nanocomposites (ZnO/rGO) are synthesized via a simple one-pot solvothermal technique. The nanoparticle–nanorod turnability was achieved with the increase in GO additive, which was necessary to control the defect formation. The optimal defect in ZnO/rGO not only increased ZnO/rGO surface and carrier concentration, but also provided the alternative carrier pathway assisted with rGO sheet for electron–hole separation and prolonging carrier recombination. These properties are ideal for photodetection and photocatalytic applications. For photosensing properties, ZnO/rGO shows the improvement of photosensitivity compared with pristine ZnO from 1.51 (ZnO) to 3.94 (ZnO/rGO (20%)). Additionally, applying bending strain on ZnO/rGO enhances its photosensitivity even further, as high as 124% at r = 12.5 mm, due to improved surface area and induced negative piezoelectric charge from piezoelectric effect. Moreover, the photocatalytic activity with methylene blue (MB) was studied. It was observed that the rate of MB degradation was higher in presence of ZnO/rGO than pristine ZnO. Therefore, ZnO/rGO became a promising materials for different applications.

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Copper (I) Selenocyanate (CuSeCN) as a Novel Hole‐Transport Layer for Transistors, Organic Solar Cells, and Light‐Emitting Diodes

Wijeyasinghe

Tsetseris

Regoutz

et al. 2018

Adv Funct Materials

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The synthesis and characterization of copper (I) selenocyanate (CuSeCN) and its application as a solution-processable hole-transport layer (HTL) material in transistors, organic light-emitting diodes, and solar cells are reported. Density-functional theory calculations combined with X-ray photoelectron spectroscopy are used to elucidate the electronic band structure, density of states, and microstructure of CuSeCN. Solution-processed layers are found to be nanocrystalline and optically transparent (>94%), due to the large bandgap of ≥3.1 eV, with a valence band maximum located at −5.1 eV. Hole-transport analysis performed using field-effect measurements confirms the p-type character of CuSeCN yielding a hole mobility of 0.002 cm 2 V −1 s −1 . When CuSeCN is incorporated as the HTL material in organic light-emitting diodes and organic solar cells, the resulting devices exhibit comparable or improved performance to control devices based on commercially available poly(3,4-ethy lenedioxythiophene):polystyrene sulfonate as the HTL. This is the first report on the semiconducting character of CuSeCN and it highlights the tremendous potential for further developments in the area of metal pseudohalides.

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Evolution of electrical performance of ZnO-based thin-film transistors by low temperature annealing

Cited by 12 publications

References 17 publications

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

Effect of GO Additive in ZnO/rGO Nanocomposites with Enhanced Photosensitivity and Photocatalytic Activity

Copper (I) Selenocyanate (CuSeCN) as a Novel Hole‐Transport Layer for Transistors, Organic Solar Cells, and Light‐Emitting Diodes

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