Evolution of growth and enhancement in power factor of InSb bulk crystal

Ebnalwaled, A. A.

doi:10.1016/j.jcrysgro.2009.07.040

Cited by 8 publications

(6 citation statements)

References 22 publications

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“…The most significant results can be summarized as follows: All parts under study exhibit semiconducting behaviour. The studied parts were found to be p‐type semiconductor. As samples were not intentionally doped, this result is in good agreement with published data [24,25,31–35]. In all cases, dewetted zone has the highest value of σ in comparison to the values measured for the seed, the attached and the partially dewetted zones, see Table 2. The stable dewetted zone in sample N4 has the highest value of σ among all studied parts, for GaSb samples grown in this work. The temperatures intervals for conduction regions (extrinsic, intermediate and intrinsic) deviated slightly from a zone to another. …”

Section: Measurement Results and Analysissupporting

confidence: 92%

“…The studied parts were found to be p‐type semiconductor. As samples were not intentionally doped, this result is in good agreement with published data [24,25,31–35].…”

Section: Measurement Results and Analysissupporting

confidence: 92%

“…The ohmic nature of the contacts was verified by recording the current–voltage characteristics for forward and reverse directions. More details about electrical measurements can be found in [24,25].…”

Section: Methodsmentioning

confidence: 99%

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Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices

Ebnalwaled¹,

Duffar²,

Sylla³

2013

Cryst. Res. Technol.

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The dewetting technique has been applied to the growth of InSb and GaSb polycrystals. After optimization of the set up and growth parameters, four samples, 88 mm in length and 11 mm in diameter, have been obtained. Their electrical properties were investigated in relation to the type of solidification (attached, dewetted and so on). In spite of the polycrystalline structure of these samples, room temperature Hall mobilities obtained for dewetted antimonide samples have shown the highest values obtained till now. These results indicate that dewetting can be used to produce InSb and GaSb with high mobility for device applications.

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Section: Measurement Results and Analysissupporting

confidence: 92%

“…The studied parts were found to be p‐type semiconductor. As samples were not intentionally doped, this result is in good agreement with published data [24,25,31–35].…”

Section: Measurement Results and Analysissupporting

confidence: 92%

See 1 more Smart Citation

Dewetting and transport property enhancement: antimonide crystals for high performance electronic devices

Ebnalwaled¹,

Duffar²,

Sylla³

2013

Cryst. Res. Technol.

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show abstract

“…The power factor was increased with temperature and kept a constant at around 900-1073 K. The maximum values of the power factor of Ni 3 GaSb and Ni 3 InSb were obtained at 1073 K to be 0.43 and 0.45 mW m −1 K −2 , respectively. These values were larger than those of the related compounds such as pure GaSb [11] and InSb [12] bulk samples. The temperature dependence of the thermal conductivity (Ä) of the polycrystalline samples of Ni 3 GaSb and Ni 3 InSb is shown in Fig.…”

Section: Resultsmentioning

confidence: 61%

“…Based on these interesting electrical properties, the TE properties such as S, , and Ä of GaSb and InSb have been examined [11][12][13][14]. For example, Su et al investigated the TE properties of Zn-doped InSb single crystals and reported the maximum ZT value to be around 0.27 at 700 K [13].…”

Section: Introductionmentioning

confidence: 99%