2016
DOI: 10.1103/physrevlett.116.077002
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Evolution of High-Temperature Superconductivity from a Low-TcPhase Tuned by Carrier Concentration in FeSe Thin Flakes

Abstract: We report the evolution of superconductivity in an FeSe thin flake with systematically regulated carrier concentrations by the liquid-gating technique. With electron doping tuned by the gate voltage, high-temperature superconductivity with an onset at 48 K can be achieved in an FeSe thin flake with T_{c} less than 10 K. This is the first time such high temperature superconductivity in FeSe is achieved without either an epitaxial interface or external pressure, and it definitely proves that the simple electron-… Show more

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Cited by 273 publications
(200 citation statements)
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“…The origin of this phenomenon is under debate with both interfacial doping and substrate-modified electron-phonon coupling implicated in the enhancement 80 . The transition temperature of few-layer FeSe can also be modified through electrostatic tuning 81,82 (Fig. 3b).…”
Section: Creating Macroscopic Quantum Coherencementioning
confidence: 99%
“…The origin of this phenomenon is under debate with both interfacial doping and substrate-modified electron-phonon coupling implicated in the enhancement 80 . The transition temperature of few-layer FeSe can also be modified through electrostatic tuning 81,82 (Fig. 3b).…”
Section: Creating Macroscopic Quantum Coherencementioning
confidence: 99%
“…It undergoes a structural transition around 90 K [2], then becomes superconducting near 8 K. Under high pressure, its superconducting temperature (T c ) can be enhanced to 37 K [3]. When FeSe was intercalated with potassium by liquid gating [4] or dosed with potassium on the surface [5], the T c could reach 46 K. Most remarkably, FeSe monolayer film grown on SrTiO 3 (001) substrate even exhibits T c as high as 65 K [6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…In the first of these systems, a quite high T c in the range of 35 K to 41 K was observed, for the electron-doped FeSe using an electric double-layer transistor, which climbs to 46 K to 48 K for the potassium-coated bulk FeSe and rises above 100 K for FeSe monolayer (6)(7)(8)(9)(10). Remarkably, in the overdoped regime of the potassium-coated bulk FeSe, an electronic-correlation-driven insulating phase is developed, where an AFM ordering is also proposed (8).…”
mentioning
confidence: 99%