The modeling and characterization of low-frequency noise and noise variability in various regimes of operation are investigated for the main advanced complementary metal-oxide semiconductor (CMOS) technologies. Novel materials and innovative device architectures from 0.5 μm to 20 nm gate lengths are studied. The impact of gate stack, realized with ultrathin oxides, polysilicon gate and high-k/metal gate is analyzed. The influence of alternative channel materials, in particular ultrathin body silicon-on-insulator layers, strain Si and III-V materials is addressed. The comparison of low-frequency noise in advanced device architectures, including bulk Si, fully depleted SOI, FinFET, junctionless, and multi-gates structures, is shown. Accurate noise models, taking into account the main physical mechanisms, are proposed for all these very advanced technologies, which will be needed for the nanoelectronics of the next decade.