“…Understanding the electronic transport in lateral devices has necessitated the development of several current- (AFM- and STM-based potentiometry and nanoimpedance microscopies − ) and force-sensitive scanning probe microscopy (SPM) techniques. These techniques can be considered nanoscale analogs of the classical methods of determining potential distribution, such as moving vibrating reed electrometry and lateral electrode conductometry. − In particular, Kelvin probe force microscopy (KPFM) − and electrostatic force microscopy (EFM) , have emerged as powerful characterization methods and have been used in recent decades for studies of charge transport and accumulation in transistors, , solar and electrochemical cells, , microelectromechanical systems (MEMS), , gas sensors, − ferroelectric devices, and electroceramics. − This approach was further extended to map out linear and nonlinear frequency-dependent transport, as implemented in the scanning impedance microscopy (SIM) and its nonlinear analogs. ,− …”