Evolution of Structural and Optical Properties of Cuprous Oxide Particles for Visible Light Absorption

Abstract

Absorbent materials are being developed to replace semiconductor materials such as p-type silicon, GaAs, CdTe, and quaternary compounds such as CIGS (copper indium gallium selenide). Cu2O is a potential candidate because it is non-toxic, inexpensive, an abundant compound in the Earth’s crust, and has good optical properties, such as a high absorption coefficient. In this work, Cu2O was obtained simply by reducing Benedict’s solution with glucose in an alkaline medium (pH 10.2 ± 0.2) at 65°C. The samples were synthesized by varying glucose content from 1 g to 7 g. The results showed a phase proportion variation between 95.56% and 99.50% of the Cu2O phase. It was found that the changes in crystallite size, microstrains, particle size, and morphology are due to reaction times, which were influenced by the use of different glucose amounts. The use of a higher glucose amount in the synthesis favors a faster reaction, forming smaller crystallites with more microstrains. Lower glucose amount leads to a slower reaction giving the crystallites more time to grow, which relaxes the microstrains. When increasing glucose content, the obtained morphologies changed from cubes, irregular cubes, prismatic spheres, cauliflower-like, to spherical shapes. The XPS spectra confirmed only the presence of chemical species such as Cu(I) and Cu(II), and chemical defects, such as oxygen vacancies (Vo), were detected in the samples. All samples presented a broad absorption range from 200 nm to 570 nm indistinctly of the morphology. The band gap showed an insignificant change from 2.04 eV to 2.09 eV when glucose was increased from 1 g to 7 g. The in-situ phase transformation study was analyzed from 25°C to 700°C. The results indicated a phase transition from Cu2O to Cu and CuO when the temperature was above 280°C.

Investigation of Multi‐Phase Structure and Optoelectronic Performance of Bi‐Doped (Cu−Zn) Oxide Composite Thin Films

“…Both copper oxides show a p-type semiconductor behavior caused by metal deficiency (copper vacancy generation). [5,6] Similarly, zinc oxide (ZnO) is chemically stable and has a wide and direct band gap. [7] Unlike copper oxides, ZnO shows an n-type semiconductor behavior, which is caused by the oxygen vacancies in the crystal structure.…”

“…Cupric oxide (CuO) is also a semiconductor, which has an indirect band gap and is smaller than cuprous oxide. Both copper oxides show a p‐type semiconductor behavior caused by metal deficiency (copper vacancy generation) [5,6] . Similarly, zinc oxide (ZnO) is chemically stable and has a wide and direct band gap [7] .…”