Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition

Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung Yi; Horng, Ray−Hua; Cheng, Li Chung; Talwar, Devki N.; Lin, H. H.; Lee, Jyh Fu; Feng, Zhe Chuan; Wan, Lingyu

doi:10.1016/j.jcrysgro.2019.05.024

Cited by 4 publications

(3 citation statements)

References 32 publications

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“…ZnGa 2 O 4 is a wide-bandgap, conductive, chemically and thermally stable semiconductor. ZnGa 2 O 4 has received significant attention these days because it has potential applications in missile threat attention, solar-blind ultraviolet (UV) photodetectors (PDs), photocatalyst, UV radiation monitor in the environment, and lithography alignment [84,85]. UV photodetectors fabricated by using ZnGa 2 O 4 thin films are discussed here in detail.…”

Section: Applications Of Znga 2 Omentioning

confidence: 99%

Zinc Gallium Oxide—A Review from Synthesis to Applications

et al. 2020

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Spinel ZnGa2O4 has received significant attention from researchers due to its wide bandgap and high chemical and thermal stability; hence, paving the way for it to have potential in various applications. This review focuses on its physical, optical, mechanical and electrical properties, contributing to the better understanding of this material. The recent trends for growth techniques and processing in the research and development of ZnGa2O4 from bulk crystal growth to thin films are discussed in detail for device performance. This material has excellent properties and is investigated widely in deep-ultraviolet photodetectors, gas sensors and phosphors. In this article, effects of substrate temperature, annealing temperature, oxygen partial pressure and zinc/gallium ratio are discussed for device processing and fabrication. In addition, research progress and future outlooks are also identified.

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Section: Applications Of Znga 2 Omentioning

confidence: 99%

Zinc Gallium Oxide—A Review from Synthesis to Applications

et al. 2020

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“…There are several methods for the preparation of ZnGa 2 O 4 thin films, including: sol-gel [12], pulsed laser deposition [13], metalorganic chemical vapor deposition (MOCVD) [14], and radio…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

et al. 2019

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Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.

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“…Hence, the development of ZnGa 2 O 4 film-based PDs is essential. ZnGa 2 O 4 films have been reported earlier by several research groups using radio-frequency (RF) magnetron sputtering [19,20], pulsed laser deposition [21], metal-organic chemical vapor deposition (MOCVD) [22], and mist-CVD [23]. Among these, RF magnetron sputtering is a cost-effective and dependable technology that is extensively utilized by industrial processes to build commercial optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films

et al. 2021

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Spinel ZnGa2O4 films were grown on c-plane sapphire substrates at the substrate temperature of 400 °C by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700 °C in order to enhance their crystal quality. The effect of thermal annealing on the microstructural and optoelectronic properties of ZnGa2O4 films was systematically investigated in various ambiences, such as air, nitrogen, and oxygen. The X-ray diffraction patterns of annealed ZnGa2O4 films showed the crystalline structure to have (111) crystallographic planes. Transmission electron micrographs verified that ZnGa2O4 film annealed under air ambience possesses a quasi-single-crystalline structure. This ZnGa2O4 film annealed under air ambience exhibited a smooth surface, an excellent average transmittance above 82% in the visible region, and a wide bandgap of 5.05 eV. The oxygen vacancies under different annealing ambiences were revealed a substantial impact on the material and photodetector characteristics by X-ray photoelectron spectrum investigations. ZnGa2O4 film exhibits optimal performance as a metal-semiconductor-metal photodetector when annealed under air ambience. Under these conditions, ZnGa2O4 film exhibits a higher photo/dark current ratio of ~104 order, as well as a high responsivity of 2.53 A/W at the bias of 5 V under an incident optical light of 240 nm. These results demonstrate that quasi-single-crystalline ZnGa2O4 films have significant potential in deep-ultraviolet applications.

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Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition

Cited by 4 publications

References 32 publications

Zinc Gallium Oxide—A Review from Synthesis to Applications

Zinc Gallium Oxide—A Review from Synthesis to Applications

Influence of Annealing Temperature on the Properties of ZnGa2O4 Thin Films by Magnetron Sputtering

The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films

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