Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Corni, Federico; Gambetta, Francesca; Nobili, C.; Tonini, Rita; Zapparoli, Mauro

doi:10.1016/s0921-5107(99)00376-1

Cited by 9 publications

(11 citation statements)

References 13 publications

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“…There were rather low broad α bands instead of sharp and distinct peaks observed in [3][4][5]. The lower height of a peak obtained in the reported experiment could be explained by two facts: (i) the implantation fluence is twice smaller than that employed in [4,5]; (ii) implantation energy is significantly higher than in [4,5], hence the projected range is approximately twice as large. Both these facts lead to the conclusion that the number of He cavities per unit surface is much smaller during the reported experiments.…”

Section: Resultsmentioning

confidence: 50%

“…In the above mentioned papers He implantation energies were either rather low (20 keV or less) [3][4][5][6] or in the MeV range [7,8]. The authors of the present paper decided to fill that gap and use energies typical of the implanter in the Institute of Physics, Lublin.…”

Section: Introductionmentioning

confidence: 96%

“…This process was initially studied in metals [2], but it also occurs in semiconductors. Formation of voids in silicon, the most important material for semiconductor industry, by He implantation was widely studied [3][4][5][6][7][8], as the buried layer of voids could be used e.g. for gettering of impurities [9,10].…”

Section: Introductionmentioning

confidence: 99%

“…on factors as implantation temperature [6], annealing temperatures [4] or post-implantation parameters [5]. The typical TDS spectrum contains two peaks: one of them (β) observed for lower temperatures and assigned to the release of He dissolved in Si (occupying vacancies and interstitials) and the other (α) corresponding to the release from the Hefilled voids.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Desorption of Helium from Defected Silicon

et al. 2015

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The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45• tilt) while the fluence was 10 16 cm −2 . Additionally, the influence of Si pre-implantation (fluences in the range 10 14 −10 16 cm −2 , E = 260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10 15 cm −2 , while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10 16 cm −2 .

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Section: Resultsmentioning

confidence: 50%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal Desorption of Helium from Defected Silicon

et al. 2015

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“…The technique was often employed in the case of materials widely applied in electronics, like silicon [8,9] for implanted metals [10][11][12] as well as thin films [13][14][15]. Special attempts were made to study formation of bubbles (gas filled cavities) as a result of highfluence (≈ 10 16 cm −2 and even more) inert gas ion implantation [8,[16][17][18][19]. The intensive studies on formation of cavities filled with gas atoms and He release from the implanted Si were focused on different factors governing these processes including implantation [8] and annealing temperatures [16] or H + ion post-implantation parameters [17].…”

Section: Introductionmentioning

confidence: 99%

Thermal Desorption of Krypton Implanted into Silicon

et al. 2017

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The thermal desorption spectrometry studies of krypton implanted Si samples are presented. Implantations (with the fluence 2 × 10 16 cm −2 ) were done with the energies 100, 150, and 200 keV. Additionally, a 200 keV and 100 keV Kr + G double implantation was performed. A sudden Kr release was observed in the ≈ 1100−1400 K range, most probably coming from the gas bubbles in cavities. The desorption activation energy varies from 2.5 eV (100 keV) to 0.8 (200 keV). The peak splitting suggests existence of two kinds of cavities trapping the implanted noble gas. Two Kr releases are observed for the 200 and 100 keV double-implanted samples. The peak shift of the release corresponding to 100 keV implantation could be a result of both introduced disorder and higher effective Kr concentration. The desorption activation energy is risen to ≈ 3.2 eV for both releases.

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Molecular dynamics simulation of helium ion implantation into silicon and its migration

Liu

et al. 2019

Nuclear Instruments and Methods in Physics Research Section B:

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Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Cited by 9 publications

References 13 publications

Thermal Desorption of Helium from Defected Silicon

Thermal Desorption of Helium from Defected Silicon

Thermal Desorption of Krypton Implanted into Silicon

Molecular dynamics simulation of helium ion implantation into silicon and its migration

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