2020
DOI: 10.1016/j.solmat.2020.110586
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Evolutionary PERC+ solar cell efficiency projection towards 24% evaluating shadow-mask-deposited poly-Si fingers below the Ag front contact as next improvement step

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Cited by 41 publications
(27 citation statements)
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“…The next development step is to replace the Al base contacts with p-type POLO junctions also in either BJ or IBC configuration. Even though the industrial integration of these concepts may be a few years down the road, the building blocks for their realization are currently under development 11 , 28 . Perovskite-Si tandem cells are still in a research state where their economic feasibility is not yet proven.…”
Section: Discussionmentioning
confidence: 99%
“…The next development step is to replace the Al base contacts with p-type POLO junctions also in either BJ or IBC configuration. Even though the industrial integration of these concepts may be a few years down the road, the building blocks for their realization are currently under development 11 , 28 . Perovskite-Si tandem cells are still in a research state where their economic feasibility is not yet proven.…”
Section: Discussionmentioning
confidence: 99%
“…The PERC technology is dominating the c‐Si photovoltaic solar cell production with 95% market share in 2019 due to its lean process flow and strong evolutionary development 1 . The efficiencies increased by 0.5% per year 2 mainly by improved bulk material quality, 3 by reducing front finger widths 4 and thus shading and contact recombination, as well as by minimizing recombination in the passivated emitter regions 5,6 . However, there are theoretical and practical limits in the PERC cell.…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, there are inherent challenges of the POCl 3 diffusion. Emitter contact recombination can be reduced by further paste improvement and by utilization of selectively doped emitter schemes but still implies J 0e,met values in the range of ~1,400 fA/cm 2 (area‐weighted >28 fA/cm 2 ) 2 . By contrast, the saturation current densities on n‐type poly‐Si on oxide (POLO) passivating contacts can be reduced to <1 fA/cm 2 (~2 fA/cm 2 ) on planar 7–9 (on textured 10,11 ) surfaces.…”
Section: Introductionmentioning
confidence: 99%
“…Ni-Cu metallization is believed to be an alternative method to the current dominant screen-printed metallization in conventional silicon solar cells [20]. Additionally, since the width of Ag fingers is minimized to approximately 35 µm in 2019 from 100 µm in 2010 [21], these fingers will be more susceptible to EM failure.…”
Section: Introductionmentioning
confidence: 99%