Exact noise figure of a noisy two-port with feedback

Lam, V.M.T.; Yip, Peter C. L.

doi:10.1049/ip-g-2.1992.0074

Cited by 3 publications

(4 citation statements)

References 5 publications

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“…Figure shows the two‐port representation of a small‐signal microwave transistor with its termination and port impedances, which is also valid for the feedback applied transistor whose feedback network's signal and noise parameters can be included in the transistor's respective parameters using linear and noise theories . The dependency of the noise figure F , the input and output VSWRs, and the gain G T of a small‐signal transistor (Figure ) on the source Z S = R S + jX S and load Z L = R L + jX L terminations is well‐known and can be presented as highly nonlinear equations in the z‐parameter domain, as in Table .…”

Section: A Small‐signal Microwave Transistormentioning

confidence: 95%

“…The feedback network consists of a pure single reactance element only. In this case, the noise figure of the combined network can be expressed as follows :

F_{SE} = F_{\min}^{'} + \frac{R_{n}^{'}}{G_{s}} {|Y_{s} - Y_{italicopt}^{'}|}^{2} + \frac{R_{n}^{'}}{G_{s}} ({}, {|Y_{opt}^{'}|}^{2} ([], {|ϕ_{1}|}^{2} - 1) + 2 Re ([], ((), \frac{F_{\min}^{'} - 1}{2 R_{n}^{'}} - Y_{opt}^{'}) {(Y_{s})}^{*} ((), ϕ_{1} - 1))),

where

F_{\min}^{'}, R_{n}^{'}

, and

Y_{opt}^{'}

are the minimum noise figure, noise resistance, and minimum noise admittance of the main two port, respectively. Y S = G S + jB S is the source admittance; ϕ 1 , A 1 , and B 1 are given as follows:

ϕ_{1} = A_{1} Y_{s} + B_{1}; A_{1} = \frac{{\overset{false^}{z}}_{11} z_{21}^{'} - z_{11}^{'} {\overset{false^}{z}}_{21}}{z_{21}^{'} + {\overset{false^}{z}}_{21}}; B_{1} = \frac{{\overset{z}{true}}_{21}}{z_{21}^{'} + {\overset{false^}{z}}_{21}} .

…”

Section: The Noise Figure and Gain Circles Of The Transistor With Appmentioning

confidence: 99%

“…In the current work, first, a small‐signal microwave transistor with the series inductive/parallel capacitive feedback is characterized as a linear active two‐port in terms of the signal and noise parameters of the device and the feedback . Then, the full flexible performance characterization is carried out in terms of the feedback applied transistor through solving its highly nonlinear performance equations analytically using the performance measurement circles to determine the compatible/incompatible ( Freq ≥ Fmin, Vinreq ≥ 1, Voutreq ≥ 1, GTmin ≥ GT ≥ GTmax ) quadruplets with their ( Z S , Z L ) terminations and with feedback parameters along the whole of the device's operation band at the chosen bias condition ( V DS , I DS ).…”

Section: Introductionmentioning

confidence: 99%

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Full flexible performance characterization of a feedback applied transistor with LNA applications

Güneş

Yurttakal

2019

Circuit Theory & Apps

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In this paper, the full flexible performance characterization of a transistor with series inductive/parallel capacitive feedback is carried out in terms of LNA applications. For this purpose, the input VSWR V in -maximum available gain G Tmax variations are constructed for a high technology low-noise transistor that is subject to the required noise figure F req (f ) F min (f ) along the device's operation band depending on the feedback. These V in -G Tmax variations result in the application of a design chart that indicates which value of feedback can be applied within which region of the operation band with the improvable trade-off between the V in and output VSWR V out for the Freq(f) ≥ Fmin(f). Following this, the optimum trade-off between V in and V out is made for the necessary operation frequency regions using the load impedance Z L as an instrument with the predetermined source impedance Z S . Finally, the LNA applications of a series inductive/parallel capacitive feedback applied transistor with the optimum V in , V out , and G T subject to Freq(f) ≥ Fmin(f) ≥ are also presented as distributed across the entire bandwidth in the different operation bands. It can be concluded that this rigorous work will enable a designer to utilize the entire operation frequency band of transistor through using only a single series inductive/parallel capacitive feedback for the LNA designs of Freq(f) ≥ Fmin(f) with the optimum trade-offs among its performance measures. K E Y W O R D Sfeedback, gain, microwave transistor, noise figure, stability, VSWR | INTRODUCTIONA low-noise amplifier (LNA) is the most significant part of data transmission systems since its noise dominates the overall sensitivity of the system. The challenge involved in LNA design optimization lies in enabling the transistor to amplify subject to its physical limitations and the trade-off relations among the noise, gain, and mismatching at its input and output ports within the operation domain (V DS , I DS , f). Therefore, the most significant ingredient of an LNA design optimization is the feasible design target space (FDTS), which covers the full potential performance of the transistor in question within its operation (V DS , I DS , f) domain. The FDTS must be calculated through the following two stages: (a) the signal and noise parameters of the transistor are modelled throughout its operation domain (V DS , I DS , f) using either artificial intelligence tools 1-4 or novel optimization methods such as those adopted in 5-7 ; (b) in the second *Corrections added on 08 January 2020, after first online publication: Missing symbols "" and "" throughout the paper have been added.

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Section: A Small‐signal Microwave Transistormentioning

confidence: 95%

“…The feedback network consists of a pure single reactance element only. In this case, the noise figure of the combined network can be expressed as follows :

F_{SE} = F_{\min}^{'} + \frac{R_{n}^{'}}{G_{s}} {|Y_{s} - Y_{italicopt}^{'}|}^{2} + \frac{R_{n}^{'}}{G_{s}} ({}, {|Y_{opt}^{'}|}^{2} ([], {|ϕ_{1}|}^{2} - 1) + 2 Re ([], ((), \frac{F_{\min}^{'} - 1}{2 R_{n}^{'}} - Y_{opt}^{'}) {(Y_{s})}^{*} ((), ϕ_{1} - 1))),

where

F_{\min}^{'}, R_{n}^{'}

, and

Y_{opt}^{'}

are the minimum noise figure, noise resistance, and minimum noise admittance of the main two port, respectively. Y S = G S + jB S is the source admittance; ϕ 1 , A 1 , and B 1 are given as follows:

ϕ_{1} = A_{1} Y_{s} + B_{1}; A_{1} = \frac{{\overset{false^}{z}}_{11} z_{21}^{'} - z_{11}^{'} {\overset{false^}{z}}_{21}}{z_{21}^{'} + {\overset{false^}{z}}_{21}}; B_{1} = \frac{{\overset{z}{true}}_{21}}{z_{21}^{'} + {\overset{false^}{z}}_{21}} .

…”

Section: The Noise Figure and Gain Circles Of The Transistor With Appmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Full flexible performance characterization of a feedback applied transistor with LNA applications

Güneş

Yurttakal

2019

Circuit Theory & Apps

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“…Resistive stabilisation using shunt or series feedback for improving stability is a well-known technique [22]. Series and shunt feedback can have a detrimental effect on noise performance as treated in [43,44] and the work of [45] proposes a combined series-shunt configuration to independently control noise and gain for a SiGe HBT LNA. Another technique is to add a loading resistance at the output with optimised value that can result in minimal impact on noise performance [46].…”

Section: Treating the Potentially Unstable Casementioning

confidence: 99%

Design of microwave transistor amplifiers with optimum cascaded gain and noise

Corral

2016

IET Microwaves, Antennas & Propagation

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The design of microwave transistor amplifiers with optimum cascade noise and gain is described. By treating two stages at a time, the condition for the second stage's noise figure needed to satisfy the total cascaded gain and noise performance is derived. Two optimal solutions are possible: Minimum cascade noise figure or maximum available cascade power gain without increasing the cascade noise over that of the minimum noise design. A design example is submitted showing the effectiveness of the proposed method in optimising the gain and noise of cascaded amplifier stages. The approach can be extended to noise temperature and multiple cascaded stages including passive blocks without any loss of generality.

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High dynamic range double-balanced active mixers using lossless feedback

Trask

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No

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Exact noise figure of a noisy two-port with feedback

Cited by 3 publications

References 5 publications

Full flexible performance characterization of a feedback applied transistor with LNA applications

Full flexible performance characterization of a feedback applied transistor with LNA applications

Design of microwave transistor amplifiers with optimum cascaded gain and noise

High dynamic range double-balanced active mixers using lossless feedback

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