2022
DOI: 10.1109/tmag.2022.3154025
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Examination of Magnetization Switching Behavior by Bi-Directional Read of Spin-Orbit-Torque MRAM

Abstract: We propose a read-reliability model to construct a bi-directional stabilized spin-orbit-torque magnetoresistive random-access memory (SOT-MRAM) structure. Since this model withstands magnetization switching with 10 times the current compared with the conventional SOT-MRAM structure, it enables low power-consumption operation while maintaining read reliability. We used various materials with different axes of easy magnetization as ferromagnetic materials in the proposed model, and confirmed that all the materia… Show more

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Cited by 2 publications
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