Examination of solar cells and encapsulations of small experimental photovoltaic modules

Šály, V.; Ruzinsky, M.; Packa, Juraj; Redi, P.

doi:10.1109/polytr.2002.1020197

Cited by 8 publications

(8 citation statements)

References 4 publications

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“…Peike et al 33 observed that these additives formulate for the root cause for discoloration by originating chromophore and lumophores. 49 The PV cells are generally equipped with front and rear contacts connected through bus stripes for delivering current to the external circuit. The origin of chromophores results in a transparent EVA ring around the edges of a wafer-based cell.…”

Section: Review Of Failures Found In Silicon Wafer-based Pv Modulesmentioning

confidence: 99%

“…This phenomenon leads to high series resistance and low parallel resistance of the PV modules. 49 The PV cells are generally equipped with front and rear contacts connected through bus stripes for delivering current to the external circuit. Any failure in the string ribbons result in thermal expansion-contraction and mechanical stress resulting in output power loss.…”

Section: Review Of Failures Found In Silicon Wafer-based Pv Modulesmentioning

confidence: 99%

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Fault diagnosis of Photovoltaic Modules

Haque

Bharath

Khan

et al. 2019

Energy Science & Engineering

129

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Fault diagnosis and condition monitoring are important to increase the efficiency and reliability of photovoltaic modules. This paper reviews the challenges and limitations associated with fault diagnosis of solar modules. A thorough analysis of various faults responsible for failure of solar modules has been discussed. After reviewing relevant work, a monitoring tool is designed using thermography and artificial intelligent systems that allows the detection of various types of faults in PV modules and at the same time the designed tool aims to filter the nonsignificant anomalies. A neural network (NN) classifier is applied to the transfer characteristics (I‐V data) of the faulty PV module for the diagnosis which adapts multilayer perceptron (MLP) networks to identify the type and location of occurring faults. The Discrete wavelet transform (DWT) based signal processing technique is utilized in the feature extraction process to reduce the NN input size. The developed detection algorithm is adapted for 24/7 automated surveillance. For a given fault condition, the average fault detection time is observed to be <9 seconds, which is lower than the previous work done. The developed algorithm achieved 100% accuracy when tested on a predetermined fault data set.

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Section: Review Of Failures Found In Silicon Wafer-based Pv Modulesmentioning

confidence: 99%

Section: Review Of Failures Found In Silicon Wafer-based Pv Modulesmentioning

confidence: 99%

Fault diagnosis of Photovoltaic Modules

Haque

Bharath

Khan

et al. 2019

Energy Science & Engineering

129

View full text Add to dashboard Cite

show abstract

“…Under the influence of these thermo-mechanical stresses and service conditions, each layer of the cell degrades, which in turn decreases the power generated by the PV cell. Various degradation modes exist in the PV cells such as optical degradation, encapsulant degradation, semiconductor cell degradation, anti-reflective coating degradation, temperature-induced degradation, and interconnect fatigue to name a few [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The measurements are conducted either by subjecting them to direct sunlight/solar lamps (light I-V), or by externally driving a current through the solar cell under dark conditions (dark I-V). Further details on the light I-V testing and comparison with dark I-V testing can be found in literature [1,3,5,7,8]. In the current study, the dark I-V technique is adopted as the more costeffective alternative; since the primary focus is on characterizing the series resistance change due to interconnect damage.…”

Section: Introductionmentioning

confidence: 99%

Durability of Pb‐free solder between copper interconnect and silicon in photovoltaic cells

Cuddalorepatta

Dasgupta

Sealing

et al. 2010

Progress in Photovoltaics

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The thermal cycling durability of large-area Pb-free (Sn3.5Ag) solder between silicon semiconductor and copper interconnects in photovoltaic (PV) cells is assessed and compared to benchmark results from Pb-based (Sn36Pb2Ag) PV cells. Accelerated thermal cycling tests have been conducted on PV cells of both solder compositions, and the increase in series resistance due to interconnect damage has been characterized using in situ dark I-V measurements. Both the Pbfree and Pb-based cells show a steep initial rise followed by a steady rate of increase in degradation histories, with the Pbfree cells showing a more pronounced 'knee' in the degradation curves. Extrapolation of the degradation data for both solders suggests that Pb-free cells are four times more durable than the Pb-based cells at the test condition. This superior thermal cycling fatigue durability of Pb-free cells was also confirmed with physics of failure (PoF) analysis, consisting of nonlinear finite element (FE) stress analysis and an energy-partitioning (E-P) solder fatigue model. FE models error-seeded with manufacturing voids in the solder interconnect predicted a significant reduction in the thermal cycling durability with increasing solder void density. However, even the most voided Pb-free cells modeled are predicted to be twice as durable as void-free Pb-based cells, under the accelerated temperature cycle used in the test. The acceleration factor (AF) predicted by the PoF analysis for a typical service environment is three times higher for Pb-free cells than that for Pb-based cells.

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“…The dark I-V measurement procedure for solar cells involves covering the cell to eliminate light-generated current, and measuring the four point I-V response by forcing an electrical current through the cell from the positive contact to the negative contact, using an external power supply. Details of dark I-V testing methodology can be found in the literatwe [I], [3], and [4].…”

Section: Inputs For Pof Approach: Specimen Configuration and Field Comentioning

confidence: 99%

Durability of Pb-Free solder connection between copper interconect wire and crystalline silicon solar cells

Cuddalorepatta

Dasgupta²,

Sealing³

et al.

Thermal and Thermomechanical Proceedings 10th Intersociety Conference on Phenomena in Electronics Systems, 2006. ITHERM 2006.

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Photovoltaic cells, thermal cycling durability, Pb-free solder, The thermal cycling durability of large-area Pb-free viscoplastic finite element analysis, energy partitioning (Sn3.5Ag) solder interconnects on photovoltaic (PV) solar fatigue model laminates, has been studied and benchmarked against existing Sn36Pb2Ag interconnects, using a combination of accelerated NOMENCLATURE testing and physics-of-failure (PoF) modeling. Accelerated thermal cycling tests conducted on photovoltaic laminates of & series ~~~i~t~~~, ohms both solder compositions, show that the interconnect k,, shunt ~~~i~t~~~~, ohms resistance (measured from dark I-V curves) show that Ph-free w, cyclic plastic work it^, m~/mm3 laminates outperform Sn37Pb laminates with significantly wC cyclic creep work it^, m~/mm3 different response history. Linear extrapolation of the trends N, Cycles to Failure from the first 1000 cycles, suggests that Sn3.5Ag N,, cycles to ~~i l~~~ from plasticity interconnects are 3.5 times more durable than Sn36Pb2Ag N,~ cycles to ~~i l~~~ from creep interconnects. Due to nonlinearities in the damage growth qr ~~~~i l~ shear stress, pa rate, this estimate may be non-conservative. Post failure $I, y Plastic Tensile Strain analysis shows cracks close to the interface between the solder Y Total Shear Strain and the Ag ink used on the Si wafer. Distributed solder QActivation Energy, Jtmol damage is also evident in Sn36Pb2Ay specimens. ~c c e k a t i o n factors were estimated based on a two m T T m A n n 7 F T m A~l dimensional, viscoplastic finite element analysis and damage predictions based on an energy-partitioning fatigue model. Error-seeded models reveal that process-induced voids, commonly encountered in this architecture, can be detrimental to thermal cycling durability. Results suggest that even the worst case (highest void density) Pb-free specimen has a higher durability than the best case (void-free) Sn37Pb specimen. For the worst void density configuration, accelerated test simulations predict that the Sn3.5Ag interconnects are 1.8 times as robust as the Sn36Pb2Ag interconnects. PoF modeling also shows that the Pb-free solder PV laminates have a higher acceleration factor than the Sn37Pb solder laminates.

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Examination of solar cells and encapsulations of small experimental photovoltaic modules

Cited by 8 publications

References 4 publications

Fault diagnosis of Photovoltaic Modules

Fault diagnosis of Photovoltaic Modules

Durability of Pb‐free solder between copper interconnect and silicon in photovoltaic cells

Durability of Pb-Free solder connection between copper interconect wire and crystalline silicon solar cells

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