2022
DOI: 10.1002/smll.202102235
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Examining Different Regimes of Ionization‐Induced Damage in GaN Through Atomistic Simulations

Abstract: The widespread adoption of gGaN in radiation‐hard semiconductor devices relies on a comprehensive understanding of its response to strongly ionizing radiation. Despite being widely acclaimed for its high radiation resistance, the exact effects induced by ionization are still hard to predict due to the complex phase‐transition diagrams and defect creation‐annihilation dynamics associated with group‐III nitrides. Here, the Two‐Temperature Model, Molecular Dynamics simulations and Transmission Electron Microscopy… Show more

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Cited by 5 publications
(2 citation statements)
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“…1 Moreover, owing to its very good radiation resistance, GaN is also a very interesting material for applications that involve ionizing radiation. 2 The main characteristics that provide high stability in extreme radiation environments are the high displacement energies of the atoms (45 eV for Ga atoms and 109 eV for N atoms 3 ) and the very good dynamic annealing properties, even below room temperature. 4 Additionally, its wide bandgap of 3.4 eV 5,6 allows operation in high-temperature environments and also makes the detector insensitive to visible radiation.…”
Section: ■ Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…1 Moreover, owing to its very good radiation resistance, GaN is also a very interesting material for applications that involve ionizing radiation. 2 The main characteristics that provide high stability in extreme radiation environments are the high displacement energies of the atoms (45 eV for Ga atoms and 109 eV for N atoms 3 ) and the very good dynamic annealing properties, even below room temperature. 4 Additionally, its wide bandgap of 3.4 eV 5,6 allows operation in high-temperature environments and also makes the detector insensitive to visible radiation.…”
Section: ■ Introductionmentioning
confidence: 99%
“…GaN is a wide-bandgap semiconductor with many interesting properties and a material that has revolutionized different semiconductor device markets, with special emphasis on the lighting industry . Moreover, owing to its very good radiation resistance, GaN is also a very interesting material for applications that involve ionizing radiation . The main characteristics that provide high stability in extreme radiation environments are the high displacement energies of the atoms (45 eV for Ga atoms and 109 eV for N atoms) and the very good dynamic annealing properties, even below room temperature .…”
Section: Introductionmentioning
confidence: 99%