Exceeding Nernst limit (59mV/pH): CMOS-based pH sensor for autonomous applications

Parizi, Kokab B.; Yeh, Alexander; Poon, Ada S. Y.; Wong, H.-S. Philip

doi:10.1109/iedm.2012.6479098

Cited by 31 publications

(23 citation statements)

References 5 publications

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“…We have also made our extended gate ISFET structures using off-the-shelf transistors 21 and the results were consistence with the results reported here.…”

Section: Resultssupporting

confidence: 82%

“…There have been many attempts to enhance the sensitivity of the ISFET sensors 17 18 19 20 21 22 23 24 . Engineering the sensing surface 17 18 , reducing the screening of counter-ion charge 19 , electromechanical coupling techniques 20 , engineering the structural dimensions 21 and amplification of signal through the dual-gated structures 22 23 24 are among those that have been reported so far. As we discussed, the sensitivity limitation originates from the classic Boltzmann distribution of hydrogen ions for deriving the pH sensitivity 14 15 16 .…”

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confidence: 99%

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ISFET pH Sensitivity: Counter-Ions Play a Key Role

Parizi

Pal

et al. 2017

Sci Rep

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The Field Effect sensors are broadly used for detecting various target analytes in chemical and biological solutions. We report the conditions under which the pH sensitivity of an Ion Sensitive Field Effect transistor (ISFET) sensor can be significantly enhanced. Our theory and simulations show that by using pH buffer solutions containing counter-ions that are beyond a specific size, the sensor shows significantly higher sensitivity which can exceed the Nernst limit. We validate the theory by measuring the pH response of an extended gate ISFET pH sensor. The consistency and reproducibility of the measurement results have been recorded in hysteresis free and stable operations. Different conditions have been tested to confirm the accuracy and validity of our experiment results such as using different solutions, various oxide dielectrics as the sensing layer and off-the-shelf versus IC fabricated transistors as the basis of the ISFET sensor.

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“…We have also made our extended gate ISFET structures using off-the-shelf transistors 21 and the results were consistence with the results reported here.…”

Section: Resultssupporting

confidence: 82%

mentioning

confidence: 99%

ISFET pH Sensitivity: Counter-Ions Play a Key Role

Parizi

Pal

et al. 2017

Sci Rep

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“…The combined use of electrochemical Field Effect Transistors (FET) as sensors and of integrated readout circuits in CMOS technology [1]- [3], offers many potential advantages in terms of sensitivity [4], accuracy [5], repeatability, miniaturization [6], costs, parallelism [7], digitalization and communication in modern sensor systems. In Ion Sensitive FETs (ISFETs) [8] the transduction process occurs at the device interface exposed to the electrolyte and the analytes.…”

Section: Introductionmentioning

confidence: 99%

General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

Mele

Palestri

Selmi

2020

IEEE Trans. Electron Devices

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We propose a general methodology to calculate the individual sensitivity and the cross-sensitivities of potentiometric sensor devices (e.g. ISFETs, CHEMFETs) with an arbitrary number of non-interacting receptors binding to ionic species or analytes in the electrolyte. The surface charge generated at the (bare or functionalized) interface with the electrolyte is described by Poisson equation coupled to a linear system of equations for each type of receptor, where the unknowns are the fractions of sites binding with a given ion/analyte. Our general model encompasses in a unique framework a few simple special cases so far separately reported in the literature and provides for them closed-form expressions of the average site occupation probability. Detailed procedural description of the usage and benefits of the model is shown for specific cases with concurring surface chemical reactions.

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“…The RFID/TRX system can be potentially integrated with existing analyte-specific capacitive-based sensors to measure the internal biological and physiological parameters in cells such as pH level [46,47]. Although the analysis is focused on capacitive sensing, resistive sensing [48][49][50] is also possible because the resonant coupling is also affected by loop resistances, per discussion in the appendix.…”

Section: Discussionmentioning

confidence: 99%

Micrometer-Scale Magnetic-Resonance-Coupled Radio-Frequency Identification and Transceivers for Wireless Sensors in Cells

Aggarwal

Yang

et al. 2017

Phys. Rev. Applied

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We report the design, analysis and characterization of a three-inductor radio-frequency identification (RFID) and transceiver (TRX) system for potential applications in individual cell tracking and monitoring. The RFID diameter is 22 µm and can be naturally internalized by living cells. Using magnetic resonant coupling, the system shows resonance shifts when the RFID is present and also when the RFID loading capacitance changes. It operates at 60 GHz with a high signal magnitude up to −50 dB and a sensitivity of 0.25. This miniaturized RFID with a high signal magnitude is a promising step toward continuous, real-time monitoring of activities at cellular levels.

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Exceeding Nernst limit (59mV/pH): CMOS-based pH sensor for autonomous applications

Cited by 31 publications

References 5 publications

ISFET pH Sensitivity: Counter-Ions Play a Key Role

ISFET pH Sensitivity: Counter-Ions Play a Key Role

General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

Micrometer-Scale Magnetic-Resonance-Coupled Radio-Frequency Identification and Transceivers for Wireless Sensors in Cells

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