Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide

Ling, Zhaoheng; He, Jiasong; He, Xiaoyong; Liao, Mingdun; Li, Peipei; Yang, Zhenhai; Ye, Jichun; Yang, Zhenhai

doi:10.1109/jphotov.2017.2749975

Cited by 26 publications

(21 citation statements)

References 24 publications

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“…Ye and Gao's group directly deposited titanium film on an n-type c-Si of 8 Ω•cm by electron beam evaporation, which was then annealed at 250 • C in an oxygen atmosphere to form TiO 2 . The surface recombination rate can be reduced to 16 cm/s, showing an excellent passivation quality, which was attributed to the formation of Si-O-Ti bonds at the c-Si/TiO 2 interface and the chemical passivation of the SiO 2 [83]. By using a metal with an extremely low work function such as Mg and SiO 2 as the full-area electron selective contacts, the contact resistance and recombination current density were reduced to 26 mΩcm 2 and 115 fA/cm 2 , respectively [54].…”

Section: Tmo Electron-selective Contactsmentioning

confidence: 99%

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Yao

et al. 2018

Crystals

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Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.

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Section: Tmo Electron-selective Contactsmentioning

confidence: 99%

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Yao

et al. 2018

Crystals

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“…Then, the wafers were annealed under O 2 atmosphere at 250 °C for 10 min, as shown in Figure b. Finally, Figure c shows the as‐oxidized TiO x film with the schematic diagram of microstructure represented in the inserted graph …”

Section: Resultsmentioning

confidence: 99%

“…To unlock the full potential of TiO x , an attempt was made in our group to develop a simple low‐temperature oxidation (LTO) deposition approach for the fabrication of TiO x films with high passivation performance. In addition, we manifested the LTO‐TiO x films to be amorphous and further applied it into a hybrid Si SC . In this article, we proposed the LTO‐TiO x thin film by simultaneously considering the surface passivation property and the contact resistivity.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts

et al. 2019

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Passivation contact (PSC), which simultaneously achieves high passivation quality and low contact resistivity, has been proven to be a delicate design to fabricate high‐efficiency solar cells (SCs). However, traditional PSC materials, that is, intrinsic a‐Si:H/doped a‐Si:H or tunnel SiO2/doped poly‐Si, overly rely on the complex procedures and have inevitable optical or Auger recombination losses. Herein, a novel low‐temperature oxidation (LTO) process is developed and an electron‐selective TiOx film (LTO‐TiOx) is fabricated, reaching a low‐effective surface recombination velocity of 13.7 cm s−1. The high‐quality passivation performance is mainly attributed to the chemical passivation of Ti–O–Si bonds and the surface carrier manipulation ability of the LTO‐TiOx film. Next, by adding a low work function (WF) layer of LiFx film, the surface band bending effect is formed and the contact resistivity of TiOx‐based PSC is also optimized. Furthermore, the dual‐functional LTO‐TiOx/LiFx electron‐selective PSC is integrated in Si SCs and a champion efficiency is achieved near 19% with an open‐circuit voltage near 640 mV. Finally, a comprehensive simulation analysis indicates a high efficiency of more than 22% based on LTO‐TiOx PSC, followed by a detailed roadmap of efficiency improvements, demonstrating its huge application potential in SCs.

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“…To overcome this problem, the low work‐function material, LiF x , is introduced to serve as the high‐efficiency electron‐selective‐collection layer (ESCL) for an n‐type c‐Si solar cell. Nowadays, the doping‐free n‐type c‐Si solar cell with low work‐function metals, oxides, or fluorides as the ESCL for high efficiency has been proven as an excellent structure, which lowers the contact resistivity to less than tens of mΩ · cm 2 . These results solve the long‐term contact problem that impedes the development of high‐efficiency n‐type c‐Si solar cell.…”

Section: Introductionmentioning

confidence: 99%

Electron‐Selective Scandium−Tunnel Oxide Passivated Contact for n‐Type Silicon Solar Cells

et al. 2018

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Dopant-free carrier-selective contacts have a high potential for cost reduction in solar panel production because of the simple structure and manufacturing procedure. Increasing the carrier selectivity is critical for improving the efficiency of heterostructure solar cells. Low work function metals have been explored as electron-selective contact (ESC) recently. In this paper, a highperformance silicon-oxide/scandium (SiO x /Sc) ESC structure is explored as an ESC that exhibits a good contact and surface passivation. The lowest contact resistivity of 23 mΩ cm 2 and the champion single-surface saturated dark current density (J oe ) of 61 fA cm À2 have been achieved with a full-area SiO x /Sc passivated contact. It was revealed that the ScO x formed by the reaction of Sc and SiO x was the critical material modifying the interfacial work function. Finally, the champion efficiency of >15% and an open circuit voltage (V oc ) of >620 mV are achieved for the full-area rear SiO x /Sc passivated-contact n-type c-Si solar cell. A comprehensive analysis indicates that a high-efficiency n-type solar cell with efficiency of >20% is expected with the application of high-efficiency structures.

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Excellent Passivation of Silicon Surfaces by Thin Films of Electron-Beam-Processed Titanium Dioxide

Cited by 26 publications

References 24 publications

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Recent Advances in and New Perspectives on Crystalline Silicon Solar Cells with Carrier-Selective Passivation Contacts

Low‐Temperature Oxidation‐Processed Titanium Oxides as Dual‐Functional Electron‐Selective Passivation Contacts

Electron‐Selective Scandium−Tunnel Oxide Passivated Contact for n‐Type Silicon Solar Cells

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