Excellent valleytronic properties and nontrivial topological phase in germanene heterostructure

Qu, Jinfeng; Peng, Xiangyang; Luo, Chaobo; Zhong, Jianxin

doi:10.1088/2053-1591/aa913f

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…Furthermore, the orientation of subsequent Xene and substrate layers can control the energy gap, as demonstrated for silicene and germanene on MoS 2 [122,317], and lead to Moiré pattern of silicene on h-BN [331]. A significant reduction of the overlayer-substrate interaction supports the topological character of Xenes on substrates, like in stanene/4H-SiC(0 0 0 1) [122], stanene/Ge(1 1 1) [341], germanene/MoS 2 [322], germanene on graphene-covered SiC(0 0 0 1) [328], germanene on SbF [340], CuI and CaI 2 [339] or silicene on Bi/Si(1 1 1) [335]. Moreover, various van der Waals topological domain walls can be made of Xenes on h-BN, along which topologically nontrivial states can be tailored [338].…”

Section: Insulators Finding Suitable Insulating Templates Formentioning

confidence: 82%

“…In general it is true that the weaker Xene-substrate interaction the less affected DC. Many theoretical calculations indicate that the Xene's band structure will be preserved when the Xene-substrate interaction is of the van der Waals type, like for hydrogen-and halogen-passivated semiconductor surfaces [122,279,[309][310][311][312][313][314], chalcogenides [259][315-326], group-14 hybrids [242,258,[327][328][329] and other surfaces [36,304,309,310,312,[330][331][332][333][334][335][336][337][338][339][340][341][342].…”

Section: Insulators Finding Suitable Insulating Templates Formentioning

confidence: 99%

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Functionalization of group-14 two-dimensional materials

Krawiec

2018

J. Phys.: Condens. Matter

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The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp and sp orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

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Section: Insulators Finding Suitable Insulating Templates Formentioning

confidence: 82%

Section: Insulators Finding Suitable Insulating Templates Formentioning

confidence: 99%

Functionalization of group-14 two-dimensional materials

Krawiec

2018

J. Phys.: Condens. Matter

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“…These attract the researchers’ great concentrations because massive semiconductor devices are composed of it . Despite similar to the graphene in structure, the weak p – p interactions and distinct coupling of s and p bonds between Ge atoms lead to a transcendence over graphene for new physical behaviors . This motivates the enormous enthusiasm about 2D germanene.…”

Section: Introductionmentioning

confidence: 99%

Efficient Band Gap Engineering and Enhanced Optical Absorption of Vertical Germanene/h‐AlN Bilayer Heterostructure: Potential New Electronics and Optoelectronics

Gao

Shen

et al. 2019

Physica Status Solidi (b)

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In this contribution, the structural, electronic, and optical properties of Ge/AlN heterostructure (HTS) using DFT calculations have been systematically investigated. The binding energies suggest it falling into the range of van der Waals (vdW) HTS. The changing interlayer distances are employed to obtain the modulated band gaps of 3–141 meV, confirming the interface engineering an efficient means to present significant semiconductor properties of the two‐dimensional (2D) devices. The results further demonstrate that both the external electric field (E‐field) and in‐plane strain can efficiently tune the band gaps of the Ge/AlN HTS. The charge transfer at the interface region causes a built‐in electric field (Eint), contributing to the efficient separation of the photoexcited electron–hole pairs and enhancing the carrier mobility in the systems. More interestingly, the presence of the linear evolution of the band gap under electric field indicates its application prospective in pressure sensors. Besides, a semiconductor‐to‐metal transition is observed for the Ge/AlN HTS through the application of an external E‐field, which implies its wide potential application in nano‐electronic and semiconductor devices. Relatively enhanced optical absorption is presented for the Ge/AlN HTS, respectively, in the visible range than isolated AlN monolayer, and in the ultraviolet light zone than Ge monolayer. These results predict enormous significance for the Ge/AlN HTS in the field of energy conversion and functional devices.

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Domains of electrically induced valley polarization in two-dimensional Dirac semiconductors

Kochelap

Sokolov

2021

Phys. Rev. B

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Excellent valleytronic properties and nontrivial topological phase in germanene heterostructure

Cited by 3 publications

References 31 publications

Functionalization of group-14 two-dimensional materials

Functionalization of group-14 two-dimensional materials

Efficient Band Gap Engineering and Enhanced Optical Absorption of Vertical Germanene/h‐AlN Bilayer Heterostructure: Potential New Electronics and Optoelectronics

Domains of electrically induced valley polarization in two-dimensional Dirac semiconductors

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