2022
DOI: 10.1103/physrevapplied.18.024073
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Exceptional-Point Phase Transition in Coupled Magnonic Waveguides

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Cited by 22 publications
(9 citation statements)
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“…As one of the observed spatial characteristics, the spin-wave coupling length in the lateral stripes of YIG separated with the air gap can be noted [47]. The variation of the coupling length observed with Brillouin spectroscopy could serve as experimental validation of the spin-wave spectra transformation in the lateral YIG stripes with a GaAs layer [30]. Lateral structures were combined as bilayers, and spin-wave propagation was tuned via the variation of laser power focused on the surface of the GaAs layer.…”
Section: Introductionmentioning
confidence: 87%
See 1 more Smart Citation
“…As one of the observed spatial characteristics, the spin-wave coupling length in the lateral stripes of YIG separated with the air gap can be noted [47]. The variation of the coupling length observed with Brillouin spectroscopy could serve as experimental validation of the spin-wave spectra transformation in the lateral YIG stripes with a GaAs layer [30]. Lateral structures were combined as bilayers, and spin-wave propagation was tuned via the variation of laser power focused on the surface of the GaAs layer.…”
Section: Introductionmentioning
confidence: 87%
“…The pioneering works focused on such bilayers that appeared decades ago and described the SW spectra modification by the appearance of the semiconductor layer and/or by the light irradiation of this layer, and the variation of SW damping induced by the current flow in the semiconductor layer [21][22][23][24][25][26][27][28][29][30]. We note here that these works showed a lightinduced modification of the dispersion and spectra of SWs in semiconductor-ferromagnetic bilayers, and proved that this tuning is related to the change in optically injected charge carriers in the semiconductor layer.…”
Section: Introductionmentioning
confidence: 99%
“…In 2022, Sadovnikov et al proposed a method to control the spin wave loss in one of the YIG waveguides covered by GaAs semiconductor layer by infrared laser irradiation, as shown in Figure 6. [105] The infrared laser irradiates the GaAs-covered waveguide YIG-S2, which makes the charge carriers in the GaAs semiconductor layer transition from the valence band to the conduction band, [106] increasing the conductance of the semiconductor. [107] This changes the boundary conditions of the interface of YIG-S2, and finally leads to the change of spin wave dispersion and increases the loss in YIG-S2 waveguides.…”
Section: Experimental Research Progress Of Pt-symmetric Magnetic Nano...mentioning
confidence: 99%
“…The values of the laser power are indicated on the right side of each plot. Reproduced with permission [105]. Copyright 2022, American Physical Society.…”
mentioning
confidence: 99%
“…U(x) = U(−x) and U ′ ′ (x) = −U ′ ′ (−x) . The concept of PT-symmetry has aroused great interest and has been extended by appropriate analogies with various physical systems, namely in optics [13,14] (paper [14] describe electromagnetic waves in PT-symmetric optical structures), electronics [15], acoustics [16,17] and magnetism [18][19][20][21].…”
Section: Introductionmentioning
confidence: 99%