Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Kawai, Masahiko; Mori, Tatsuhiro; Kato, Masashi; Ichimura, M.; Sumie, Shingo; Hashizume, Hidehisa

doi:10.4028/www.scientific.net/msf.556-557.359

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Kawai et al published values of minority carriers, extracted from µ-PCD measurements of 2-in. ptype 4H-SiC wafer (3.9 Ω.cm), ranging from 360 to 660 ns [7]. 2 shows the absorption spectrum of the sample, similar to the one published by Weingärtner et al [8].…”

Section: Resultssupporting

confidence: 71%

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Ottaviani

Palais

Barakel

et al. 2009

MSF

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We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

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Section: Resultssupporting

confidence: 71%

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Ottaviani

Palais

Barakel

et al. 2009

MSF

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“…[2][3][4][5][6][7] However, there have been few reports on the excess carrier lifetime in p-type 4H-SiC thus far. 8,9) It is, thus, important to investigate impurities and defects affecting the excess carrier lifetime in p-type 4H-SiC.…”

Section: Introductionmentioning

confidence: 99%

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Kato

Kawai

Mori

et al. 2007

jjap

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The asymptotic spherical aberration and distortion coefficients of electron lenses always depend upon the position of the object, or the magnification, in a very simple way, and furthermore the quantities that specify the distortion are closely related to those giving the spherical aberration. These relationships are set out, and numerical values of the coefficients concerned are tabulated for Glaser's bell-shaped model; both the symmetric and the asymmetric bell are considered, and the effect of scaling with respect to the minimum projector focal length is investigated.

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Excess carrier recombination lifetime of bulk n-type 3C-SiC

Grivickas

Manolis

Gulbinas

et al. 2009

Applied Physics Letters

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Transient absorption technique was used to determine carrier lifetimes in 3C-SiC grown on Si and 6H-SiC substrates. A slow lifetime component originated from minority carrier traps and pointed out to the trap saturation with increasing injection. Recombination lifetime in different samples varied between 0.5–120 ns. Its value decreased with excess carrier density in the transition range between minority-carrier-lifetime and high-injection lifetime but abnormally increased above the carrier density of 2×1017 cm−3. Negligible contribution of surface and Auger recombination to recombination lifetime peculiarities was observed. Possible mechanisms of the observed lifetime variation are discussed.

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Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Cited by 3 publications

References 8 publications

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Excess carrier recombination lifetime of bulk n-type 3C-SiC

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