Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process

Chou, Fang-Ping; Hsieh, Yi-Hsun; Huang, Chih-Ai; Hsin, Yue-Ming

doi:10.1109/isne.2014.6839342

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2023

Publication Types

Select...

Other1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The desired low V RB is the main reason why the other PDs, except for the SML PDs, are not considered. The avalanche PDs have as extra disadvantage higher noise [9], which limits the advantage of a higher responsivity. Lastly, the SML PDs are covered in more metal than non-SML PDs in the same technology.…”

Section: Introductionmentioning

confidence: 99%

Characterisation of Photodiodes in 22 nm FDSOI at 850 nm

Bakker,

Alink,

Schmitz

et al. 2023

ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)

View full text Add to dashboard Cite

We present the analysis and measurement results of photodiodes (PDs) fabricated in 22 nm Fully-Depleted Silicon-On-Insulator (FDSOI) technology at a wavelength of 850 nm. To the best of our knowledge this is the first paper to give detailed information about PDs in 22 nm FDSOI. FDSOI has the unique opportunity to place a PD in SOI, which is potentially very fast, on top of bulk devices such as PNP-transistors for temperature sensors. Its measured responsivity is 4 µA/W at a bandwidth (BW) of 3.4 GHz. Several bulk PDs, including PW/NW/DNW, PW/DNW/PSUB, and NW/PSUB have also been characterised. They have responsivities between 6 mA/W and 207 mA/W and BWs between 23 MHz and 5.8 GHz. 22 nm FDSOI shows potential for fully-integrated high-speed optical receivers, as it combines ∼90 nm bulk CMOS PD performance with 22 nm RF and digital processing capabilities on a single die.

show abstract

Section: Introductionmentioning

confidence: 99%