Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Abstract

An excess oxygen‐peroxide‐based model that can simultaneously analyze the positive‐bias‐stress (PBS) and negative‐bias‐illumination‐stress (NBIS) instabilities in commercial self‐aligned top‐gate (SA‐TG) coplanar indium–gallium–zinc oxide (IGZO) thin‐film transistors (TFTs) is proposed herein. Existing studies have reported that the transition of oxygen vacancy (VO) charge states from VO0 to VO2+ is the dominant physical mechanism responsible for the negative shift of threshold voltage (VTH) under NBIS. However, in this study, it is observed that both the PBS and the NBIS stabilities of IGZO TFTs deteriorate at a faster rate as the amount of oxygen increases within the channel layer, implying that the conventional VO‐related defect model is inappropriate in elucidating the PBS and NBIS instabilities of commercial SA‐TG coplanar IGZO TFTs, where the channel layers are formed under high oxygen flow rates (OFRs) to make VTH positive. On the basis of the full‐energy range subgap density of states extracted before and after each stress from IGZO TFTs with different OFRs, it is determined that the generation and annihilation of the subgap states in the excess oxygen peroxide configuration are the dominant physical mechanisms for PBS and NBIS instabilities in commercial SA‐TG coplanar IGZO TFTs, respectively.

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

“… was extracted by fitting ΔΦ obtained in the retention test for each temperature, and the activation energy (0.43 eV) was extracted using the slope in the vs. 1/kT curve ( Figure 4 c) [ 59 , 60 ]. This was confirmed as the activation energy of the peroxide reaction in previous studies [ 61 , 62 ].…”

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

“…The results indicate that excessive oxygen incorporation leads to an increase in oxygen-related defects, mainly O i defects. [43][44][45][46] Consequently, although the oxygen-related defect density of the OFR(23.1%)-SZTO film significantly increases, and the O II /O T ratio remains the same as that of the OFR(0%)-SZTO film, the electron concentration undergoes minimum change and maintains a level similar to that of the OFR(16.7%)-SZTO film. Figure 3(a) shows the transfer I-V characteristics of 45 nmthick SZTO TFTs with an OFR of 0%, 9.1%, 16.7%, and 23.1% in darkness, and the electrical parameters are summarized in Table I.…”

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

“…Although these semiconducting materials can be used to obtain high mobility, a high electron concentration of these materials cause the negative threshold voltage (V T ), thereby resulting in depletion-mode TFTs. However, the positive V T is suitable for the pixel and gate driver circuits because enhancement-mode characteristic simplifies the circuit design and reduces power consumption [11,12]. Moreover, binary oxides typically have poly-or nanocrystalline structures [9,13,14].…”