2013
DOI: 10.1016/j.actamat.2013.08.054
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Exchange bias and magneto-resistance in an all-oxide spin valve with multi-ferroic BiFeO3 as the pinning layer

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Cited by 8 publications
(2 citation statements)
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“…Exchange bias is one of the key concepts in spin valves, which has revolutionized the field of magnetic recording and memory devices, by allowing the pinning of the magnetization direction of one of the magnetic electrodes. Lin, et al [64] fabricated an all-oxide spin valve with the ferroelectric antiferromagnet BiFeO3 (BFO) as the pinning AFM-layer (TN = 385 °C). The multi-layered spin-valve, where two ferrimagnetic (FM) Zn0.7Ni0.3Fe2O4 (ZNFO) layers are separated by a nonmagnetic conducting layer, was grown epitaxially on a (001) SrTiO3 substrate, as shown in Figure 11a.…”
Section: Exchange Bias (Afm/fm Interfaces)mentioning
confidence: 99%
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“…Exchange bias is one of the key concepts in spin valves, which has revolutionized the field of magnetic recording and memory devices, by allowing the pinning of the magnetization direction of one of the magnetic electrodes. Lin, et al [64] fabricated an all-oxide spin valve with the ferroelectric antiferromagnet BiFeO3 (BFO) as the pinning AFM-layer (TN = 385 °C). The multi-layered spin-valve, where two ferrimagnetic (FM) Zn0.7Ni0.3Fe2O4 (ZNFO) layers are separated by a nonmagnetic conducting layer, was grown epitaxially on a (001) SrTiO3 substrate, as shown in Figure 11a.…”
Section: Exchange Bias (Afm/fm Interfaces)mentioning
confidence: 99%
“…( c ) Temperature dependence of the exchange bias ( H ex ) and saturation magnetization ( M s). ( d ) The MR measured in such a spin valve heterostructures (Reproduced with permission from [ 64 ]. Copyright Elsevier, 2013).…”
Section: Figurementioning
confidence: 99%