Exchange bias effect modulated anisotropic magnetoresistance in Fe/YMnO3 multiferroic bilayers

Zheng, Dongxing; Gong, Jun; Chen, Jin; Li, P.; Bai, Haili

doi:10.1016/j.matlet.2015.05.005

Cited by 8 publications

(4 citation statements)

References 10 publications

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“…The anisotropic magnetoresistance measurement is employed to investigate the reason for the variation trend of H rot of [NiFe(15 nm)/FeMn(10 nm)] treated with different pulsed current. [21][22][23] As revealed in Fig. 6, H MR e is a characteristic value in the AMR spectrum of exchange biased film, and relates to H e and the angle (ϕ H ) between external magnetic field (H ext ) direction and the exchange bias (H e ) direction.…”

Section: Resultsmentioning

confidence: 97%

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Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Wang¹,

Tan²,

Li³

et al. 2018

Chinese Phys. B

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In this paper, Ta/[NiFe(15 nm)/FeMn(10 nm)]/Ta exchange-biased bilayers are fabricated by magnetron sputtering, and their static and dynamic magnetic properties before and after rapid annealing treatment with pulsed current are characterized by using a vibrating sample magnetometer (VSM) and a vector network analyzer (VNA), respectively. The exchange bias field H e and static anisotropy field H sta k decrease from 118.45 Oe (1 Oe = 79.5775 A•m −1 ) and 126.84 Oe at 0 V to 94.75 Oe and 102.31 Oe at 90 V, respectively, with increasing capacitor voltage, which supplies pulsed current to heat the sample. The effect of flash thermal annealing by pulsed current on the rotational anisotropy (H rot ), the difference value between static and dynamic magnetic anisotropy, is investigated particularly. The highest H rot is obtained in the sample annealing with 45-V capacitor (3300 µF) voltage. According to the anisotropic magnetoresistance measurements, it can be explained by the fact that the temperature of the sample is around the blocking temperature of the exchange bias system (T b ) at 45 V, the critical temperature where the formation of more unstable antiferromagnetic grains occurs.

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Section: Resultsmentioning

confidence: 97%

“…When ϕ H is fixed at 30 • , H MR e is directly proportional to the H e value of the sample. [23,24] So we determine the new exchange bias direction after annealing in the external magnetic field (H ext ) reversed to exchange bias direction by H MR e . It should be stated here that the exchange bias (H e ) direction depicted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Wang¹,

Tan²,

Li³

et al. 2018

Chinese Phys. B

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“…The first is the anisotropy magnetoresistance which originates from the response of the charge carriers in the ferromagnetic SRO layer to the change in the orientation of the magnetization with respect to the direction of the current. [ 34,39,40 ] The second and third terms are associated with the angles between the current and crystal axis and between the magnetization and the crystal axis, respectively. [ 41,42 ] These two terms have been reported to have relatively weak effects compared to anisotropic magnetoresistance.…”

Section: Resultsmentioning

confidence: 99%

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Zheng,

Fang,

Wen

et al. 2024

Adv Funct Materials

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Spin‐orbit torque resulting from non‐magnetic materials with strong spin‐orbit coupling enables electrically controlled magnetization switching, offering potential applications in ultralow‐power memory and logic devices. However, such switching of perpendicular magnetization usually requires an in‐plane magnetic field along the applied current direction, which limits its use. To address this challenge, an all‐oxide superlattice is designed and fabricated that show both the perpendicular magneto‐crystalline anisotropy and in‐plane magnetic anisotropies induced by interfacial engineering. The results demonstrate that the coexistence of perpendicular and in plane magnetic anisotropy breaks the symmetry and thus enables the pure electrical switching of perpendicular magnetization.

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“…single domain) and thus the EB is solely determined by the AF spin structure. Subsequently, this thickness dependence has been experimentally confirmed in many systems [22,23]. However, when considering incomplete domain walls in the FM layer Mejia-Lopez et al [24] analytically predicted a crossover from…”

Section: Introductionmentioning

confidence: 88%

Role of ferromagnetic spin structure in magnetization reversal and exchange bias phenomena

Hu¹,

Li²,

Chi³

et al. 2018

J. Phys. D: Appl. Phys.

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Recently, the dependence of exchange bias (EB) on ferromagnetic layer thickness (t FM ) and temperature has become a matter of controversy, triggering renewed research efforts to decipher the key aspects of these intriguing phenomena. To demonstrate these anomalous dependences linked to the ferromagnetic spin structures, a modified Monte Carlo method is used on models of NiFe/antiferromagnet and Fe/antiferromagnet bilayers where a twisted configuration is favored along the film depth in the ferromagnetic layer during magnetization reversals. It is found that the EB field deviates from the reciprocal relation with t FM towards a lower value as t FM increases, and the maximum value of the EB field with temperature appears at 97 K for NiFe and 123 K for Fe, not the lowest temperature. The decrease in the EB field with t FM may also depend on the thickness of the antiferromagnetic layer and the twisted angle. The twisted configuration formed in a thick ferromagnetic layer encourages the propagation of domain walls through the ferromagnetic film to decrease the external switching field, leading to a suppressed EB. On the other hand, this twisted configuration simultaneously widens the domain walls and removes the unstable pinning points at relatively high temperatures. As a result, EB is recovered.

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Exchange bias effect modulated anisotropic magnetoresistance in Fe/YMnO3 multiferroic bilayers

Cited by 8 publications

References 10 publications

Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Effect of flash thermal annealing by pulsed current on rotational anisotropy in exchange-biased NiFe/FeMn film

Field‐Free Switching of Magnetization in Oxide Superlattice by Engineering the Interfacial Reconstruction

Role of ferromagnetic spin structure in magnetization reversal and exchange bias phenomena

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