Exchange-Dominated Pure Spin Current Transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Alq</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Molecules

Jiang, Shengwei; Liu, S.; Wang, Peng; Luan, Zhongzhi; Tao, X. D.; Ding, Haifeng; Wu, Di

doi:10.1103/physrevlett.115.086601

Cited by 61 publications

(66 citation statements)

References 56 publications

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“…Furthermore, Fig. 3c shows that the peak field of the DC-voltage increased with the frequency that fits well with the Kittel formula 29,30 , f=( γ /2 π )(H res *(H res +4 π M s )) 1/2 , with the gyromagnetic ratio γ = gμ B /h=1.738×10 11 T −1 s −1 and the saturation magnetization M s =0.248 T. It gave a Lander factor g=2.08 for magnetized Pt surface. The fitted M s of magnetized Pt is very closed to the observed value in Ni/Pt system by XMCD measurement 19 .…”

Section: Yig(16nm)/pt(10nm) Systems the Black Circles Insupporting

confidence: 72%

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

et al. 2017

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Spin pumping in yttrium-iron-garnet (YIG)/nonmagnetic-metal (NM) layer systems under ferromagnetic resonance (FMR) conditions is a popular method of generating spin current in the NM layer. A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications. It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer. Here, by combining microwave absorption and DC-voltage measurements on thin YIG/Pt and YIG/NM 1 /NM 2 (NM 1 = Cu or Al, NM 2 = Pt or Ta), we unambiguously showed that spin current in NM, instead of from the precessing YIG magnetization, came from the magnetized NM surface (in contact with thin YIG), either due to the magnetic proximity effect (MPE) or from the inevitable diffused Fe ions from YIG to NM. This conclusion is reached through analyzing the FMR microwave absorption peaks with the DC-voltage peak from the inverse spin Hall effect (ISHE). The voltage signal is attributed to the magnetized NM surface, hardly observed in the conventional FMR experiments, and was greatly amplified when the electrical detection circuit was switched on.

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Section: Yig(16nm)/pt(10nm) Systems the Black Circles Insupporting

confidence: 72%

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

et al. 2017

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“…The employed fields of 10–400 mT (refs 19, 20) are on the same order or smaller than in ESR measurements. In the presence of an external field one must distinguish between longitudinal and transverse spin relaxation.…”

Section: Resultsmentioning

confidence: 99%

Tuning the effective spin-orbit coupling in molecular semiconductors

et al. 2017

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The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven difficult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high-mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g-shifts to spin-lattice relaxation times over four orders of magnitude, from 200 to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.

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“…Watanabe et al first reported the observation of the Hanle effect in molecular materials in a pure‐spin‐current‐type device according to the relationship between the out‐of‐plane angle (referring to the angle between the external magnetic field and the substrate plane) and the simultaneously measured values of inverse spin Hall effect (ISHE) voltage (Figure b) . However, in a later study, Jiang et al proposed that the observed “Hanle effect” may originate from the nonuniformity of the microwave magnetic field . Their conclusion has also been supported by a recent report from Yu .…”

Section: Pure‐spin‐current‐type Molecular Spintronic Devicesmentioning

confidence: 89%

“…Presently, a spin pumping process is normally employed to inject pure spin current into the molecular matrix; effectively excluding the problem of conductance mismatch between the FM and the molecules ( Figure a) . Besides the potential applications on efficient information transport, a few recent studies have also demonstrated that the pure‐spin‐current‐type molecular spintronic device is a perfect platform to study the physics of spintronic processes and spin‐related properties of molecules …”

Section: Pure‐spin‐current‐type Molecular Spintronic Devicesmentioning

confidence: 99%

“…The spin transport mechanism in molecular semiconductors, a topic of chronic debate, plays a crucial role in research on the MR origination in MSV and multifunction design. Currently, both the polaron hopping and the exchange‐interaction mechanisms of pure‐spin‐current transport have been demonstrated in molecular materials. Watanabe et al first reported the observation of the Hanle effect in molecular materials in a pure‐spin‐current‐type device according to the relationship between the out‐of‐plane angle (referring to the angle between the external magnetic field and the substrate plane) and the simultaneously measured values of inverse spin Hall effect (ISHE) voltage (Figure b) .…”

Section: Pure‐spin‐current‐type Molecular Spintronic Devicesmentioning

confidence: 99%

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Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

et al. 2019

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a new discipline. According to many outstanding contributions, [5][6][7][8][9] it has already been proven to be a very important and prospective route to promote the progress in this emerging field by making use of the special merits of molecular semiconductors and spinterface, including mechanically flexibility, [10] abundant photoelectric properties, [11] ferroelectric characteristics, [12] as well as magnetic exchange interaction at the interface. [13] Nowadays, multifunction molecular spintronic devices have gradually attracted attention from various research fields. For instance, spin organic lightemitting diode [11] and molecular spin photovoltaic device, [14] which show brand-new device functions, completely distinguished with the common spintronic device, have been first achieved recently by simply integrating the optical-electrical properties of molecules with spin valve, a prototypical spintronic device. Under the rewarding background of the thriving research on molecular semiconductors and fundamental of spintronic devices in the past decades, the study of multifunctional spintronic devices not only conforms to the development trend but also provides a new opportunity for innovative research in both molecular science and spintronics.Molecular spin valve (MSV), a spintronic device, whereby a molecular semiconductor layer is sandwiched between two ferromagnetic (FM) electrodes (Figure 1a), [8,[15][16][17][18] is considered to be the ideal bed for exploiting multifunctional applications. Herein, recent advances of multifunctional molecular spintronic devices, mostly based on MSV configuration, are systematically reviewed. First, recent studies regarding paralleland interactive-type functional molecular spintronic devices are summarized and classified according to the relationship between the working mechanisms. Subsequently, the latest studies on pure-spin-current-type molecular spintronic devices are discussed. Finally, a short summary and future prospects regarding this field are proposed. Parallel-Type Functional Molecular Spintronic DevicesWhen functional molecular semiconductor or spinterfacial engineering is employed in MSV, novel device functions can be created due to molecular properties or introduced spinterfacial effect. If the novel functions as well as the magnetic The field of spintronics has triggered an enormous revolution in information storage since the first observation of giant magnetoresistance (GMR). Molecular semiconductors are characterized by having very long spin relaxation times up to milliseconds, and are thus widely considered to hold immense potential for spintronic applications. Along with the development of molecular spintronics, it is clear that the study of multipurpose spintronic devices has gradually grown into a new research and development direction. The abundant photoelectric properties of molecular semiconductors and the intriguing functionality of the spinterface, together with novel designs of device structures, have promoted the integration of multiple functions a...

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Exchange-Dominated Pure Spin Current Transport inAlq3Molecules

Cited by 61 publications

References 56 publications

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance

Tuning the effective spin-orbit coupling in molecular semiconductors

Recent Advances in Molecular Spintronics: Multifunctional Spintronic Devices

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