Excitability in a Quantum Dot Semiconductor Laser with Optical Injection

Goulding, David; Hegarty, Stephen P.; Rasskazov, Oleg; Melnik, S.; Hartnett, Mark C.; Greene, Garrett; McInerney, John G.; Рачинский, Дмитрий; Huyet, Guillaume

doi:10.1103/physrevlett.98.153903

Cited by 184 publications

(137 citation statements)

References 17 publications

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“…We will show later on by using numeric path-continuation techniques that here indeed a saddle-node bifurcation is responsible for the loss of phase-locking. Close to this SNIPER bifurcation, the injected laser has been shown to be excitable [GOU07,KEL09,KEL11]. This can be understood by the close distance of the stable node and the saddle in phase-space.…”

Section: Injection Locking Of Quantum-dot Lasersmentioning

confidence: 99%

“…When the frequency of the injected signal is too large, the beating between the external and cavity fields can induce nonlinear oscillations [TRE85] as well as deterministic chaos [SIM94a], multi-stability [GAV97], or excitability close to the boundary of phase-locking [GOU07]. Apart from their scientific appeal, these nonlinear dynamics can also be exploited and used for technological applications.…”

Section: Quantum-dot Laser Dynamicsmentioning

confidence: 99%

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Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Injection Locking Of Quantum-dot Lasersmentioning

confidence: 99%

Section: Quantum-dot Laser Dynamicsmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…In [10] the optical injection properties of a multimode QD laser were reported. There it was shown that for low to moderate injection strengths, fast dynamics can be observed close to the locking boundary for negative detuning.…”

Section: Methodsmentioning

confidence: 99%

“…A particularly attractive property is an unusually high damping of the ROs [18] in comparison to their bulk and quantum well (QW) counterparts. This high damping has been cited as the principal reason for the increased stability of such devices subject to optical feedback [21], optical injection [8,10,14], and mutual coupling [12,15] configurations. We determine here an experimental stability diagram with the injection strength and the detuning as control parameters and note that it is considerably different from that of a conventional QW laser.…”

Section: Introductionmentioning

confidence: 99%

Optically Injected Single-Mode Quantum Dot Lasers

Kelleher

Goulding

Hegarty

et al. 2012

Quantum Dot Devices

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The response of an optically injected quantum dot semiconductor laser is studied both experimentally and theoretically. Specifically, the locking boundaries are investigated, revealing features more commonly associated with Class A lasers rather than conventional Class B semiconductor lasers (SLs). Further, various dynamical regimes are observed including excitability and multistability. Of particular interest is the observation of a phase-locked bistability. We determine the stability diagram analytically using appropriate rate equations for quantum dot lasers. In particular, the saddle-node (SN) and Hopf bifurcations forming the locking boundaries are examined and are shown to reproduce the observed experimental stability features. The generation of the phase-locked bistability is also explained via a combination of these bifurcations.

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“…1 that for the moderate bias current density j = 3j th , without detuning and with the injected optical power P opt ∼ 1mW the QD and QW carrier pulses are synchronized. The numerical simulations show that for larger bias current densities of (5 − 6) j th , the detuning of 1−5 GHz, and the injected optical power up to 3−4mW , the switching in the turn-on regime is accompanied by the rapid oscillations of the QDWELL laser output photon density which corresponds to the experimental results [5].…”

Section: Simulation Resultsmentioning

confidence: 83%

Quantum dot-in-a-well (QDWELL) laser dynamics under optical injection

Ezra

Lembrikov

2013

Opt Quant Electron

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Abstract-We investigated theoretically the optical injection influence on the dynamics of a quantum dot (QD) in a quantum well (QDWELL) laser. The carrier dynamics is synchronized due to the optical injection, and QDWELL laser manifests a high performance at repetition frequencies up to 25GHz. I. INTRODUCTIONA novel type of quantum dot (QD) laser with the-dotin-a-well (DWELL) structure based on InAs QDs grown in the strained InGaAs quantum well (QW) characterized by an extremely low threshold current density of 42.6A · cm −2 and a lasing wavelength near 1.3µm has been recently proposed [1]. However, the QDWELL laser modulation bandwidth of 7GHz is limited by the relaxation oscillation (RO) frequency. In order to improve the performance of directly modulated semiconductor lasers, the optical injection locking (OIL) of semiconductor lasers can be used providing a single-mode regime with side-mode suppression, strongly enhanced RO frequency, enhanced bandwidth, reduced nonlinearity, reduced relative intensity noise (RIN), reduced chirp, increased link gain, and near-single-sideband modulation [2]. The complicated dynamics of optically injected QDWELL lasers has been investigated both theoretically and experimentally using the Lüdge-Schöll (LS) model [3], [4]. We have shown that due to the optical injection, the electron and hole dynamics in QW and QDs is synchronized, and consequently, the QDWELL laser demonstrates a high performance in the large signal regime for the moderate bias current level at the repetition frequencies up to 25GHz.

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Excitability in a Quantum Dot Semiconductor Laser with Optical Injection

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Cited by 184 publications

References 17 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Optically Injected Single-Mode Quantum Dot Lasers

Quantum dot-in-a-well (QDWELL) laser dynamics under optical injection

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