Excitation and polarization effects in semiconductor four-wave-mixing spectroscopy

Well-width dependence of exciton-phonon scattering inInxGa1−xABorri1, Langbein2, Hvam3 et al. 1999Phys. Rev. B

“…17 In particular, in colinear polarization geometry EID has been demonstrated to be an important nonlinearity in GaAs/Al x Ga 1Ϫx As multiple QW's. 18,19 In the sample investigated here, a strong difference of the FWM intensity between colinear and cross-linear polarization of the exciting beams is also found, indicating the presence of EID. On the other hand, the good quality of the fits obtained with Eq.…”

Mixed biexcitons in single quantum wells

“…11 A significant FWM signal is observed for negative delay times, indicating important interaction-induced FWM processes such as local-field effects ͑LFE͒, 12 excitation-induced dephasing ͑EID͒, 13,14 and biexciton formation ͑BIF͒. [15][16][17] In homogeneously broadened systems a decay about twice as fast compared to positive delay times is expected for negative delay times for LFE and EID. Inhomogeneous broadening accelerates this decay.…”

Control of the Urbach band tail and interband dephasing time with post-growth annealing in low-temperature-grown GaAs

“…This exciton signal may be suppressed by either exposing the sample to a prepulse (which excites additional carriers that screen the EID coefficient [36][37][38] or by using cross-polarized excitation (which eliminates the free carrier population grating due to the phase shift between grating contributions corresponding to carriers with opposite spin 37 ). The results of these experiments are shown in Fig.…”