Excitation Cross-Section of Erbium in Semiconductor Matrices under Optical Pumping

Gusev, O. B.; Bresler,; Pak, P. E.; Yassievich, I. N.; Fernandez, M. Forcales; Vinh, N. Q.; Gregorkiewicz, T.

doi:10.4028/www.scientific.net/ssp.82-84.651

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) Donor State and Optical Activity1

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2009

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“…12, for the two photon energies indicated by arrows. While the data obtained for the higher energy value of 1.54 eV exhibit the saturating behavior characteristic of the band-to-band excitation mode [38], the dependence for excitation energy at 1.18 eV has a strong linear component superimposed on this saturating background. Such a linear dependence is expected for Bdirect[ pumping.…”

Section: ) Donor State and Optical Activitymentioning

confidence: 83%

Photonic Properties of Er-Doped Crystalline Silicon

Vinh

Gregorkiewicz

2009

Proc. IEEE

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| During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. In this paper, we present a summary of the most important results of that research. In the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics.

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Section: ) Donor State and Optical Activitymentioning

confidence: 83%