Excited state properties of donor bound excitons in ZnO

Meyer, B. K.; Sann, Joachim; Eisermann, Sebastian; Lautenschlaeger, Stefan; Wagner, Markus R.; Kaiser, Martin; Callsen, Gordon; Reparaz, J. S.; Hoffmann, A.

doi:10.1103/physrevb.82.115207

Cited by 50 publications

(51 citation statements)

References 12 publications

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“…15 K. The observed transient behavior is in principle consistent with the origin of I 6 B as being from the excited state D 0 X B suggested in Ref. 15. Indeed, the observed slower rising of I 6 indicates involvement of feeding processes, e.g., from the D 0 X B state, that are known to be efficient from PL excitation measurements.…”

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confidence: 69%

Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies

Chen

Buyanova

2011

Applied Physics Letters

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Time-resolved and magneto-photoluminescence (PL) studies are performed for the so-called I(6)(B) and I(7)(B) excitonic transitions, previously attributed to neutral donor bound excitons involving a hole from the B valence band (VB), D(0)X(B). It is shown that PL decays of these emissions at 2 K are faster than that of their I(6) and I(7) counterparts involving an A VB hole, which is interpreted as being due to energy relaxation of the hole assisted by acoustic phonons. From the magneto-PL measurements, values of effective Lande g factors for conduction electrons and B VB holes are determined as g(e) = 1.91, g(h)(parallel to) = 1.79, and g(h)(perpendicular to) = 0, respectively.

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confidence: 69%

Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies

Chen

Buyanova

2011

Applied Physics Letters

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“…31,64,67 Participation of rotational and vibrational states is observed in the group with the smallest energy distance to the detection energy (1-2 meV) which cannot be resolved in our samples with PLE linewidths of ∼ 5 meV. The next group of excitation channels involves acceptor bound excitons with holes from valence bands which lie energetically below the A-valence band as e.g.…”

mentioning

confidence: 75%

“…76 Furthermore, defect bound excitons exhibit strongly different thermal activation energies E act if compared to point defect bound excitons in their close energetic vicinity 31,64 but in section IV and Tab. I it is shown that E act scales with E loc without the occurrence of such structural defect bound exciton related particularities.…”

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confidence: 98%

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Optical signature of Mg-doped GaN: Transfer processes

et al. 2012

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Mg doping of high quality, metal organic chemical vapor deposition grown GaN films results in distinct traces in their photoluminescence and photoluminescence excitation spectra. We analyze GaN:Mg grown on sapphire substrates and identify two Mg related acceptor states, one additional acceptor state and three donor states which are involved in the donor acceptor pair band transitions situated at 3.26 eV -3.29 eV in GaN:Mg. The presented determination of the donor acceptor pair band excitation channels by photoluminescence excitation spectroscopy in conjunction with temperature dependent photoluminescence measurements results in a direct determination of the donor and acceptor binding, localization, and activation energies which is put into a broader context based on Haynes's rule. Furthermore, we analyze the biexponential decay dynamics of the photoluminescence signal of the acceptor and donor bound excitons. As all observed lifetimes scale with the localization energy of the donor and acceptor related bound excitons, defect and complex bound excitons can be excluded as their origin. Detailed analysis of the exciton transfer processes in the close energetic vicinity of the GaN bandedge reveals excitation via free and bound excitonic channels but also via an excited state as resolved for the deepest localized Mg related acceptor bound exciton. For the two Mg acceptor states we determine binding energies of 164±5 meV and 195±5 meV which is in good agreement with recent density functional theory results. This observation confirms and quantifies the general dual nature of acceptor states in GaN based on the presented analysis of the photoluminescence and photoluminescence excitation spectra.

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“…A . Lying about 4.4 meV above these lines are the weaker and spectrally broader peaks related to the D 0 X transitions involving a B-VB hole [5,6], D 0 X B -see e.g. the I 6 B line in Fig.…”

Section: Samples and Methodsmentioning

confidence: 99%

Magneto-optical properties and recombination dynamics of isoelectronic bound excitons in ZnO

Chen¹,

Chen²,

Buyanova

2014

AIP Conference Proceedings

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Magneto-optical and time-resolved photoluminescence (PL) spectroscopies are employed to evaluate electronic structure of a bound exciton (BX) responsible for the 3.364 eV line (labeled as I * 1 ) in bulk ZnO. From timeresolved PL spectroscopy, I * 1 is concluded to originate from the exciton ground state. Based on performed magneto-PL studies, the g-factors of the involved electron and hole are determined as being g e = 1.98 and g h // ( g h ⊥ ) = 1.2 (1.62), respectively. These values are nearly identical to the reported g-factors for the I * line in ZnO (Phys. Rev. B 86, 235205 (2012)), which proves that I * 1 should have a similar origin as I * and should arise from an exciton bound to an isoelectronic center with a hole-attractive potential.

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Excited state properties of donor bound excitons in ZnO

Cited by 50 publications

References 12 publications

Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies

Donor bound excitons involving a hole from the B valence band in ZnO: Time resolved and magneto-photoluminescence studies

Optical signature of Mg-doped GaN: Transfer processes

Magneto-optical properties and recombination dynamics of isoelectronic bound excitons in ZnO

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