Excited state spectroscopy and spin splitting in single layer MoS<sub>2</sub> quantum dots

Kumar, P.; Kim, H.; Tripathy, S.; Watanabe, K.; Taniguchi, T.; Novoselov, K. S.; Kotekar-Patil, D.

doi:10.1039/d3nr03844k

Nanoscale

2023

DOI: 10.1039/d3nr03844k

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Excited state spectroscopy and spin splitting in single layer MoS₂ quantum dots

P. Kumar,

H. Kim,

S. Tripathy

et al.

Abstract: Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured...

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2024

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Cited by 3 publications

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Material Transfer and Contact Optimization in MoS₂ Nanotube Devices

Schock,

Obloh,

Neuwald

et al. 2024

Physica Status Solidi (b)

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While the promise of clean and defect‐free nanotubes as quantum electronic devices is obvious, ranging from strong spin–orbit interaction to intrinsic superconductivity, device fabrication still poses considerable challenges. Deterministic transfer of transition metal dichalcogenide nanomaterials and transparent contacts to the nanomaterials are nowadays highly active topics of research, both with fundamental research and applications in mind. Contamination from transport agents as well as surface adsorbates and surface charges play a critical role for device performance. Many techniques have been proposed to address these topics for transition metal dichalcogenides in general. Herein, their usage for the transfer‐based fabrication of nanotube devices is analyzed. Further, different contact materials are compared in order to avoid the formation of a Schottky barrier.

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Material Transfer and Contact Optimization in MoS₂ Nanotube Devices

Schock,

Obloh,

Neuwald

et al. 2024

Physica Status Solidi (b)

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Interacting holes in a gated WSe2 quantum channel: Valley correlations and zigzag Wigner crystal

Pawłowski,

Miravet,

Bieniek

et al. 2024

Phys. Rev. B

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Surface Gate-Defined Quantum Dots in MoS₂ with Bi Contacts

Tataka,

Sharma,

Shinozaki

et al. 2024

J. Phys. Soc. Jpn.

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Excited state spectroscopy and spin splitting in single layer MoS₂ quantum dots

Abstract: Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured...

Cited by 3 publications

References 45 publications

Material Transfer and Contact Optimization in MoS₂ Nanotube Devices

Material Transfer and Contact Optimization in MoS₂ Nanotube Devices

Interacting holes in a gated WSe2 quantum channel: Valley correlations and zigzag Wigner crystal

Surface Gate-Defined Quantum Dots in MoS₂ with Bi Contacts

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Excited state spectroscopy and spin splitting in single layer MoS2 quantum dots

Abstract: Semiconducting transition metal dichalcogenides (TMDCs) are very promising materials for quantum dots and spin-qubit implementation. Reliable operation of spin qubits requires the knowledge of Landé g-factor, which can be measured...

Cited by 3 publications

References 45 publications

Material Transfer and Contact Optimization in MoS2 Nanotube Devices

Material Transfer and Contact Optimization in MoS2 Nanotube Devices

Interacting holes in a gated WSe2 quantum channel: Valley correlations and zigzag Wigner crystal

Surface Gate-Defined Quantum Dots in MoS2 with Bi Contacts

Contact Info

Product

Resources

About

Excited state spectroscopy and spin splitting in single layer MoS₂ quantum dots

Material Transfer and Contact Optimization in MoS₂ Nanotube Devices

Material Transfer and Contact Optimization in MoS₂ Nanotube Devices

Surface Gate-Defined Quantum Dots in MoS₂ with Bi Contacts