Exciton cooling and localization in GaAs/AlGaAs multiquantum well structures

Marie, X.; Lephay, F.; Amand, T.; Barrau, J.; Voillot, F.; Brousseau, M.

doi:10.1016/0749-6036(91)90301-7

Cited by 14 publications

(8 citation statements)

References 10 publications

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“…For larger temperatures (T  50 K), we observe that the initial PL decay time decreases. We measured the same temperature dependences for samples ML B and ML C. We emphasize that we did not observe in this temperature range any blue shift of the PL peak which could have been the fingerprint of a transient change from a localized exciton regime to a free exciton regime 64,65 . In a very simple approach, the PL decay time in this temperature range can be written as…”

mentioning

confidence: 64%

“…In contrast the measurement of intrinsic radiative lifetime of free excitons in III-V and II-VI quantum wells could only be observed in high quality samples with narrow linewidths dominated by homogenous broadening 59,60 . For excitons in lower quality samples with Stokes shift of a few meV (energy difference between emission and absorption exciton peaks), localization and scattering processes usually yield much longer decay times of luminescence 65 . In the TMDC ML investigated in this paper, we did not measure any significant Stokes shift.…”

Section: Free and Localized Excitons Dynamicsmentioning

confidence: 99%

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Exciton radiative lifetime in transition metal dichalcogenide monolayers

et al. 2016

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confidence: 64%

Section: Free and Localized Excitons Dynamicsmentioning

confidence: 99%

Exciton radiative lifetime in transition metal dichalcogenide monolayers

et al. 2016

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“…At low temperatures radiative recombination is dominated by the excitons trapped at lower energies. For these localized excitons, the radiative life time is relatively shorter than free carriers as a result of the violation of the K-selection rule [13]. As the temperature increases, however, excitons trapped at lower energies are thermally activated to higher energies as observed in Figs.…”

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confidence: 91%

Time‐resolved photoluminescence and steady‐state optical studies of GaInNAs and GaInAs single quantum wells

Sun

Lombez

Braun

et al. 2007

Phys. Status Solidi (c)

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Time-resolved photoluminescence spectroscopy is used to investigate carrier dynamics of Ga 1-x In x N y As 1-y (x ~ 0.33, y ~ 0.01) single quantum well (QW) structures. PL spectra measured as a function of temperature together with the PL decay times at wavelengths around and below the PL peak energy are used to determine de-trapping activation energies and time constants. The results are interpreted in terms of simultaneous thermal excitation of deep localized excitons to shallow localized states. According to the model, with increasing temperatures, localized excitons gain enough thermal energy to populate the free exciton states in quantum well with shorter lifetimes due to coherent nature of free excitons. In addition, at temperatures around and above 80 K, more non-radiative channels become available to compete with the radiative processes leading to shorter time constants. 1 Introduction Dilute nitride alloys (GaAsN, InGaAsN and GaAsSbN) have recently attracted considerable attention as promising materials for long wavelength laser diodes as well as high efficient multijunction solar cells. The incorporation of a low content of nitrogen (< 2%) in the host material induces dramatic changes in the optical and electronic properties [1][2][3]. However, the compositional nonuniformity of nitrogen and indium induces a spatial distribution of different sized clusters hence to the associated states [4,5]. These cluster states reflect potential fluctuations that are inherent in the disordered systems resulting in the creation of intrinsic regions of strong localization. Strongly localized states dominate radiative recombination dynamics at low temperatures. In this contribution, we report on the time resolved photoluminescence (TRPL) studies of sequentially grown GaInNAs/GaAs and GaInAs/GaAs single quantum wells. We interpret our results in terms of localized excitons in nitrogen containing quantum well but free exciton recombination in nitrogen free well.

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“…The long rise time associated to exciton cooling and localization at low temperature is consistent with what is typically measured in QW structures in other materials systems. 16 All steady-state and transient PL experiments thus demonstrate that inserting Al 0.68 In 0.32 Sb layers within the QWs to form CQWs does not alter significantly the properties of the QWs. In particular, this introduces neither QW potential fluctuation nor non-radiative recombination centers in spite of additional interfaces and high Al-content.…”

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confidence: 93%

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

Cerutti

Castellano

Rodriguez

et al. 2015

Applied Physics Letters

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We have investigated in detail the material, optical, and lasing properties of innovative GaInSb/AlInSb composite quantum wells (CQWs). The CQWs are confined by AlGaAsSb barrier layers, and a monolayer-thin AlInSb barrier layer has been inserted within the GaInSb QWs in order to achieve lasing emission within the telecom window. High-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopies reveal high structural quality of the samples. Inserting AlInSb layers allows wider QWs, and thus higher gain-material volume and CQW/optical mode overlap. This translates into better laser performances. Near room temperature, a threshold current of 85 mA and an output power of ∼30 mW/uncoated-facet under continuous wave operation are demonstrated at 1.55 μm with 10 μm × 1 mm laser diodes.

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Exciton cooling and localization in GaAs/AlGaAs multiquantum well structures

Cited by 14 publications

References 10 publications

Exciton radiative lifetime in transition metal dichalcogenide monolayers

Exciton radiative lifetime in transition metal dichalcogenide monolayers

Time‐resolved photoluminescence and steady‐state optical studies of GaInNAs and GaInAs single quantum wells

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

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