1997
DOI: 10.4028/www.scientific.net/msf.239-241.275
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Exciton Emission in LaF<sub>3</sub> Crystals

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Cited by 3 publications
(3 citation statements)
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“…Assuming that the increase in the gap value is entirely due to downshift of the valence band, the valence band edge has the value of −9.6 eV, just above that of the largest nanocluster. However, the exact position of the edges and the value of the gap would be heavily affected by the disorder in the fluoride sublattice due to exceptionally low barriers for fluorine vacancy diffusion . As reported earlier, the nanocluster electron affinity is dependent on the average coordination of lanthanum and whether there is an exposed cation.…”
Section: Resultsmentioning
confidence: 85%
“…Assuming that the increase in the gap value is entirely due to downshift of the valence band, the valence band edge has the value of −9.6 eV, just above that of the largest nanocluster. However, the exact position of the edges and the value of the gap would be heavily affected by the disorder in the fluoride sublattice due to exceptionally low barriers for fluorine vacancy diffusion . As reported earlier, the nanocluster electron affinity is dependent on the average coordination of lanthanum and whether there is an exposed cation.…”
Section: Resultsmentioning
confidence: 85%
“…Excitation of the singly doped crystals with 308 nm laser light at room temperature produces colour centres by a two-photon process similar to those obtained with x-rays or γ -rays. The low-temperature thermoluminescence curves, created by VUV illumination or x-ray irradiation, are similar for Ce 3+ -doped CaF 2 , SrF 2 and BaF 2 [25].…”
Section: The Nature Of Eu 2+ -Related Transitions In the Vuv Regionmentioning
confidence: 80%
“…All of the above-cited papers show that in alkali halide crystals and in alkaline-earth fluoride crystals containing different impurities (Tl + , Pb 2+ , Ce 3+ ), during illumination with ultraviolet photons with energy lower than the energy of band-to-band transitions, trappedelectron and trapped-hole defects are created. In several papers it was assumed that impurity levels in the band gap were filled by electrons by a charge-transfer mechanism [20,[23][24][25]. However, in the case of BaFX:Eu 2+ we have shown that impurities assist in the creation of trapped electrons and holes.…”
Section: The Nature Of Eu 2+ -Related Transitions In the Vuv Regionmentioning
confidence: 99%