Exciton emission of ytterbium‐implanted cadmium telluride

Abstract

Luminescence measurements show that implantation of cadmium telluride with ytterbium (followed by a suitable annealing treatment) produces an ytterbium defect capable of binding a n exciton. Annihilation of the exciton bound to this defect produces a sharp emission at 1.6850 eV. Prelimhary studies show that the emission does not split if the crystal is subjected to uniaxial stress. The temperature dependences of these and other excitons are studied and compared with the temperature dependences obtained for YbSf emissions in ytterbium-implanted cadmium telluride.Lumineszenznntersuchungen zeigen, daB die Implantation von Ytterbium in Kadmiumtellurid (gefolgt von einem geeigneten TemperungsprozeS) eine Ytterbiumstorstelle erzeugt, die ein Exziton binden kann. Die Annihilation des an dieser Storstelle gebundenen Exzitons fiihrt zu einer scharfen Emissionsbande bei 1,5850 eV. Vorliiufige Untersuchungen zeigen, daB die Emissionsbande unter uniaxialer Spannung nicht aufspaltet. Die Temperaturabhangigkeit dieser und anderer Exzitonen werden untersucht und mit der Temperaturabhangigkeit fur YbSf-Emission in Ytterbium-implantiertem Kadmiumtellurid verglichen.

Characterization of optical and electrical properties of CdTe:Yb co-doped with Ge

“…Exciton emission at this energy was observed in Yb-implanted and annealed CdTe as in Ref. [13] and related to a complex of Yb and Cd vacancy. Comparison of undoped and Yb-doped samples shows a shift from an almost pure neutral-acceptor-bound excitondominated spectrum of undoped CdTe towards a mixed spectrum with a strong neutral-donor-bound exciton component and confirms a tendency of a shift of Fermi level towards the conduction band as a result of Yb doping.…”