Exciton Energy Transfer in GaP: N

Wiesner, P.; Street, R. A.; Wolf, H. D.

doi:10.1103/physrevlett.35.1366

Cited by 112 publications

(30 citation statements)

References 6 publications

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“…The PLE features appeared at energies lower than the band gap arise from the localized N states, which can efficiently excite the deeper N states via the well-known excitation transfer process between the N centers. 18 In contrast to the downshift of the CBM, the N-related levels are pinned in energy as observed both in PL or/and PLE ͓also shown in Figs. 3͑a͒ and 2͑a͔͒.…”

mentioning

confidence: 86%

Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: In

et al. 2004

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Direct evidence for N-induced strong coupling of host conduction band ͑CB͒ states in GaN x P 1Ϫx is provided by photoluminescence excitation. It is manifested as: ͑1͒ a drastic change in the ratio of oscillator strengths between the optical transitions involving the CB minimum ͑CBM͒ and the high-lying ⌫ CB state; ͑2͒ a strong blueshift of the ⌫ CB state with increasing x accompanying a redshift of the CBM, ͑3͒ pinning of the localized N states and a newly emerging t 2 (L or X 3 ) CB state. These findings shed new light on the issue of the dominant mechanism responsible for the giant band-gap bowing of dilute nitrides.

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confidence: 86%

Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: In

et al. 2004

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“…It is interesting to consider the influence of exciton transfer between neighboring NN i and NN j (i6 ¼j) pairs, which also might affect the relative PL intensity (the number of spots in our case) among different N-N pairs [16]. Recent study also showed that the kinetics of exciton transfer in a N-doped GaP bulk sample of [N] 3D ¼ 2.1% can be well described by the model which assumes the radiative exciton recombination and the energy-loss exciton hopping via phonon-assisted tunneling between different kinds of ARTICLE IN PRESS Fig.…”

Section: Resultsmentioning

confidence: 99%

Isoelectronic nitrogen δ-doping in GaP and single-photon emission from individual nitrogen pairs

Sakuma

Ikezawa

Watanabe

et al. 2008

Journal of Crystal Growth

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“…32 It is, therefore, reasonable to ascribe D to the emission from the isolated nitrogen center in the alloy. The fact that the intensity of D is the weakest among A, B, C, and D suggests an efficient energy relaxation from isolated N centers to deeper pair or cluster centers, as is known for GaP:N. [38][39][40] However, we do need to rule out the possibility that D could originate from the N x state in the buffer layer, which might have been unintentionally doped with N, due to the existence of the carriers either directly excited in or diffused into the buffer. Indeed, the N x transition in N-contaminated GaAs barriers was observed in a GaAsN / GaAs quantum well samples by some of us previously.…”

Section: B Assignment and Pressure Behavior Of B C And Dmentioning

confidence: 94%

Pressure behavior of the alloy band edge and nitrogen-related centers inGaAs0.999N0.001

Ding

et al. 2005

Phys. Rev. B

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The photoluminescence of a GaAsN alloy with 0.1% nitrogen has been studied under pressures up to 8.5 GPa at 33, 70, and 130 K. At ambient pressure, emissions from both the GaAsN alloy conduction band edge and discrete nitrogen-related bound states are observed. Under applied pressure, these two types of emissions shift with rather different pressure coefficients: about 40 meV/ GPa for the nitrogen-related features, and about 80 meV/ GPa for the alloy band-edge emission. Beyond 1 GPa, these discrete nitrogen-related peaks broaden and evolve into a broad band. Three new photoluminescence bands emerge on the high-energy side of the broad band, when the pressure is above 2.5, 4.5, and 5.25 GPa, respectively, at 33 K. In view of their relative energy positions and pressure behavior, we have attributed these new emissions to the nitrogen-pair states NN 3 and NN 4 , and the isolated nitrogen state N x . In addition, we have attributed the high-energy component of the broad band formed above 1 GPa to resonant or near-resonant NN 1 and NN 2 , and its main body to deeper cluster centers involving more than two nitrogen atoms. This study reveals the persistence of all the paired and isolated nitrogen-related impurity states, previously observed only in the dilute doping limit, into a rather high doping level. Additionally, we find that the responses of different N-related states to varying N-doping levels differ significantly and in a nontrivial manner.

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Exciton Energy Transfer in GaP: N

Cited by 112 publications

References 6 publications

Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: In

Experimental evidence for N-induced strong coupling of host conduction band states inGaNxP1−x: In

Isoelectronic nitrogen δ-doping in GaP and single-photon emission from individual nitrogen pairs

Pressure behavior of the alloy band edge and nitrogen-related centers inGaAs0.999N0.001

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