Exciton-impurity interactions in high-purity InP

Benzaquen, R.; Leonelli, R.; Charbonneau, S.

doi:10.1103/physrevb.59.1973

Cited by 9 publications

(11 citation statements)

References 19 publications

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“…Therefore, even if most of the collisions are of elastic nature and that they only contribute to the exciton dephasing process, 27 we can expect a relevant contribution to the exciton thermalization from the inelastic processes as already found in GaAs 28 and InP. 29 This mechanism is also in agreement with the observed behavior when changing the lattice temperature T L provided the scattering rate only depends on the exciton energy and not on T L . Thus, as observed in Fig.…”

Section: Discussionsupporting

confidence: 84%

Large-kexciton dynamics in GaN epilayers: Nonthermal and thermal regimes

Vinattieri¹,

Bogani²,

Cavigli³

et al. 2013

Phys. Rev. B

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We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of LO-phonon replicas is used to address the energy relaxation in the excitonic band. From ps time-resolved spectra we bring evidence for a long lasting non-thermal excitonic distribution which accounts for the first 50 ps. Such a behavior is confirmed in different experimental conditions, both when non-resonant and resonant excitation are used. At low excitation power density the exciton formation and their subsequent thermalization is dominated by impurity scattering rather than by acoustic phonon scattering. The estimate of the average energy of the excitons as a function of delay after the excitation pulse provides information on the relaxation time, which describes the evolution of the exciton population to the thermal regime.

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Section: Discussionsupporting

confidence: 84%

Large-kexciton dynamics in GaN epilayers: Nonthermal and thermal regimes

Vinattieri¹,

Bogani²,

Cavigli³

et al. 2013

Phys. Rev. B

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“…Table reports the exciton reduced mass values derived by an average over various measurements performed on NW arrays with different diameters. The L component of the exciton is heavier than the U component that is likely due to the different k -dispersion of the two energy branches around Γ. − Table also shows values of the exciton reduced mass previously determined in InP WZ NWs with average d = 140 nm and grown by the Au-seeded vapor–liquid–solid (VLS) mechanism . In those measurements, the U and L components could not be resolved because magneto-PL was performed at 77 K. The excellent agreement found between the two sets of data supports the general validity of our results and their independence on the NW morphology and/or size.…”

Section: Resultssupporting

confidence: 79%

“…At specific energy, the elastic-scattering cross-section of neutral donors has a maximum. In turn, this leads to a modification of the polariton population distribution in the renowned upper and lower energy branches. , Very similar observations were also reported in InP and interpreted using a model in which polaritons undergo scattering with different elements. , In both cases, a dip is observed in the PL spectra as shown in Figure . From now on, the upper (U) and lower (L) energy branches will be treated on an equal footing as two distributions of distinct states.…”

Section: Samplessupporting

confidence: 76%

“…The double peak at about 1.493 eV is due to the free exciton (FE) recombination, as confirmed by the studies reported in section S2 in SI and by polarization-resolved PL measurements in ref 9. The FE line shape resembles preceding findings in high-purity ZB bulk InP 28 and GaAs. 29 The energy separation between the lower-and upper-energy components (indicated as L and U in Figure 1, respectively) is about 1.8 meV.…”

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confidence: 85%

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Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires

et al. 2016

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The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m = (0.078 ± 0.002) m (m is the electron mass in vacuum) and perpendicular to ĉ is m = (0.093 ± 0.001) m, resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m = (0.81 ± 0.18) m and m = (0.250 ± 0.016) m, respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.

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“…For instance, in high-purity InP polariton-impurity interaction is essential up to 30 K only. 55 Contributions related to the A exciton band can appear at higher temperatures due to increasing excitonpolariton branch population for more effective scattering by LA phonons. Together with imprisonment of the polariton states in the bottleneck region, this results in an increase of the depolarized component.…”

Section: Discussionmentioning

confidence: 99%

Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly π-polarized line near theAexciton

et al. 2002

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Polarized microphotoluminescence ͑-PL͒ and reflectivity studies of thick wurtzite GaN grown by hydride vapor phase epitaxy on c sapphire are performed with the light vector k both normal to the c axis ͑kЌc͒ and parallel to it. A strong PL peak is found in the vicinity of the A exciton in polarization ͑kЌc, E parallel to the c axis͒, in apparent contradiction to the selection rules. The -polarized component exceeds in intensity the -polarized one up to ϳ50 K. Power-and temperature-dependent measurements of both no-phonon and longitudinal optical phonon-assisted ͑monitoring the real density of exciton states͒ -PL reveal the complex nature of the -polarized PL line near the A exciton. At low temperatures the -component involves a bound B exciton contribution, while at higher temperatures contributions of scattered A exciton states become appreciable. The enhancement of the -polarized component is attributed to the complex structure of the excitonpolariton branches for kЌc. Temperature-dependent -PL and reflectance spectroscopies reveal additionally a difference in the optical properties between the sample regions at the top surface and the cleaved edges, tentatively explained as induced by different strains in these regions.

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Exciton-impurity interactions in high-purity InP

Cited by 9 publications

References 19 publications

Large-kexciton dynamics in GaN epilayers: Nonthermal and thermal regimes

Large-kexciton dynamics in GaN epilayers: Nonthermal and thermal regimes

Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires

Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly π-polarized line near theAexciton

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