A key element in the emergence of a full spintronics technology is the development of voltage controlled spin filters to selectively inject carriers of desired spin into semiconductors. We previously demonstrated a prototype of such a device using a II-VI dilute-magnetic semiconductor quantum well which, however, still required an external magnetic field to generate the level splitting. Recent theory suggests that spin selection may be achievable in II-VI paramagnetic semiconductors without external magnetic field through local carrier mediated ferromagnetic interactions. We present the first experimental observation of such an effect using non-magnetic CdSe self-assembled quantum dots in a paramagnetic (Zn,Be,Mn)Se barrier.PACS numbers: 72.25. Dc, 85.75.Mm Nanomagnetics has over the past few years produced a series of fascinating and often unanticipated phenomena. To name a few, molecular magnets exhibit quantum tunnelling of the magnetization[1], magnetic atoms on a surface exhibit giant magnetic anisotropies [2], and magnetic domain walls are being harnessed as data carriers [3]. Here, we report on another remarkable phenomenon: self-assembled quantum dots, fabricated from II-VI dilute magnetic semiconductors (DMS) that macroscopically exhibit paramagnetism, possess a remanent magnetization at zero external field. This allows us to operate the dots as voltage controlled spin filters, capable of spin-selective carrier injection and detection in semiconductors. Such spin filter devices could provide a key element in the emergence of a full spintronics technology [4]. We present the first experimental observation of such a device using an approach based on the incorporation of non-magnetic CdSe self assembled quantum dots (SADs) in paramagnetic (Zn,Be,Mn)SeWe previously demonstrated a prototype of such a spin filter using a II-VI DMS-based resonant tunnelling diode [5]. However, while that device was tuned by a bias voltage, the spin filtering mechanism still required an external magnetic field. Moreover, ferromagnetic III-V semiconductors like (Ga,Mn)As are not suitable for resonant tunnelling devices due to the short mean free path of holes [6]. Recent theoretical works [7,8,9] have suggested that spin selection may be achievable in II-VI DMS without any external magnetic field by creating localized carriers that might mediate a local ferromagnetic interaction between nearby Mn atoms.Our sample is an MBE-grown all-II-VI resonant tunnelling diode (RTD) structure consisting of a single 9 nm thick semi-magnetic Zn 0.64 Be 0.3 Mn 0.06 Se tunnel barrier, sandwiched between gradient doped Zn 0.97 Be 0.03 Se injector and collector. Embedded within the barrier are 1.3 monolayers of CdSe. The lattice mismatch between the CdSe and the Zn 0.64 Be 0.3 Mn 0.06 Se induces a strain in the CdSe material, which is relaxed by the formation of isolated CdSe dots [10]. The full layer stack is given in Fig. 1. Standard optical lithography techniques were used to pattern the structure into 100 µm square pillars, and contacts wer...