Exciton magnetotransport in two-dimensional systems: Weak-localization effects

Arseev, P. I.; Dzyubenko, A. B.

doi:10.1134/1.558641

Cited by 23 publications

(17 citation statements)

References 20 publications

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“…In GaN/(Al,Ga)N structures studied in this paper and up to 9 T, we seem to deal with the opposite limit: χ 1. Numerical modeling of the IX transport within a drift-diffusion model (see Appendixes) [32,47] allows us to estimate that the enhancement of the exciton mass M(B)/M does not exceed a few percent at B < 9 T, consistent with estimations that can be done in the χ < 1 regime [63,64]:…”

Section: A Exciton Transportsupporting

confidence: 76%

Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

et al. 2021

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The Mott transition from a dipolar excitonic to an electron-hole plasma state is demonstrated in a wide GaN/(Al,Ga)N quantum well at T = 7 K by means of spatially resolved magnetophotoluminescence spectroscopy. Increasing optical excitation density, we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a quadratic energy dependence on the magnetic field, to the unbound electron-hole state, characterized by a linear shift of the emission energy with the magnetic field. The complexity of the system requires taking into account both the density dependence of the exciton binding energy and the exciton-exciton interaction and correlation energy that are of the same order of magnitude. We estimate the carrier density at Mott transition as n Mott ≈ 2 × 10 11 cm −2 and address the role played by excitonic correlations in this process. Our results strongly rely on the spatial resolution of the photoluminescence and the assessment of the carrier transport. We show that in contrast to GaAs/(Al,Ga)As systems, where transport of dipolar magnetoexcitons is strongly quenched by the magnetic field due to exciton mass enhancement, in GaN/(Al,Ga)N the band parameters are such that the transport is preserved up to 9 T.

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Section: A Exciton Transportsupporting

confidence: 76%

Complexity of the dipolar exciton Mott transition in GaN/(AlGa)N nanostructures

et al. 2021

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“…[7,8,11,12]. The magnitude of the interference contribution is sensitive to the temperature via the coherence time τ * and the distribution function of excitons, and to the magnetic field which affects exciton interference due to flux of the field "passing through" the exciton [23]. The sensitivity of the interference contribution to the exciton diffusion coefficient to the spin-orbit splittings and the electron-hole exchange interaction may be also useful to study the Berry phase effects in excitonic transport [47].…”

Section: Discussionmentioning

confidence: 99%

Spin-dependent coherent transport of two-dimensional excitons

Durnev¹,

Glazov²

2016

Phys. Rev. B

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We propose a theory of interference contributions to the two-dimensional exciton diffusion coefficient. The theory takes into account four spin states of the heavy-hole exciton. An interplay of the single particle, electron and hole, spin splittings with the electron-hole exchange interaction gives rise to either localization or antilocalization behavior of excitons depending on the system parameters. Possible experimental manifestations of exciton interference are discussed.

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“…In the derivation above only the essential terms of up to the second order in B and the lowest orders in |k|a B are taken into account. The expressions for the dimensionless constants α e(h) and β e(h) for a 2D Wannier-Mott exciton can be found in [17] (we corrected the typos in the original formulas): β e(h) = 4 −6 M −2 105m 2 h(e) − 159µ 2 /2 and α e(h) = −2m h(e) κ/M , κ = −21µ/(16 2 M ). Note that β e , β h > 0 are positive, therefore, the exciton scattering cross-section increases with B when l B ≫ a B .…”

Section: Figmentioning

confidence: 99%