Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

Mamedov, G. M.; Karabulut, Muhammet Ali; Ertap, Hüseyin; Kodolbaş, O.; Öktü, Ö.; Bacıoğlu, Akin

doi:10.1016/j.jlumin.2008.09.015

Cited by 13 publications

(11 citation statements)

References 25 publications

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“…Undoped and boron doped InSe single crystals were grown using conventional Bridgman-Stockbarger method from a stoichiometric mixture of high purity In (99.9999%), Se (99.999%) and B (99.7%) in evacuated quartz ampoules (10 À 4 Torr) whose inner walls were coated with graphite [3,37]. Ingots were cleaved perpendicular to the c axis using a razor blade.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence properties of boron doped InSe single crystals

Ertap

Bacıoğlu

Karabulut

2015

Journal of Luminescence

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Section: Methodsmentioning

confidence: 99%

Photoluminescence properties of boron doped InSe single crystals

Ertap

Bacıoğlu

Karabulut

2015

Journal of Luminescence

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“…In some papers, the concentration of well-incorporated dopants in GaSe was found to depend on the charge 39,45,46 ; however, this finding is only valid for noticeable dopant concentrations. For small quantities of volatile dopants, a significant proportion can interact with the ampoule wall.…”

Section: Crystal Characterizationmentioning

confidence: 98%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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“…Excitonic effects are important in the optic absorption, electrophotoluminescence and photoconductivity of GaSe crystals, which are members of layered A III B VI crystal family, and these effects have been investigated widely [1,[13][14][15][16][17][18][19]. Unlike other crystals, exciton states continue to exist at room temperature and above in GaSe crystals [13].…”

Section: Introductionmentioning

confidence: 99%

“…Unlike other crystals, exciton states continue to exist at room temperature and above in GaSe crystals [13]. Exciton electroabsorption and exciton photoconductivity in GaSe crystals have been investigated and it has been seen that exciton states broadened and ionized to free charge carriers in the presence of external electric field [1,[13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%