Exciton quantum confinement effect in nanostructures formed by laser radiation on the surface of CdZnTe ternary compound

Medvíd, A.; Mychko, A.; Strilchyk, O.; Litovchenko, N. M.; Naseka, Yu.; Onufrijevs, Pāvels; Pludonis, A.

doi:10.1002/pssc.200879869

Cited by 18 publications

(10 citation statements)

References 13 publications

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“…One can see, low-temperature photoluminescence spectrum of initial crystal consists of the following emission lines [6,11,12] The radiation-induced changes in the low-temperature photoluminescence of the studied crystals are the same as in previous case in [6]. This fact indicates the similar impurity-defects structure of initial samples in previous [6] and recent works.…”

Section: Resultssupporting

confidence: 63%

Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method

Nasieka

Rashkovetskyi

Strilchuk

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Resultssupporting

confidence: 63%

Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method

Nasieka

Rashkovetskyi

Strilchuk

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…ture gradient field. At the same time, nanostructure on the surface of Ge, Si, [5] and CdZnTe [17] and graded bandgap in CdZnTe with opposite direction of gradient at low intensity LR, is described in paper [16]. In our experiment [17] it is formed at higher intensities, for example, nanostructure is formed at intensities I > 4.0 MW/cm …”

mentioning

confidence: 78%

Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

Medvíd

Onufrijevs

Daukšta

et al. 2009

Phys. Status Solidi (c)

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Dynamics of nanostructures (nanocones and nanocavties) formation on surface of semiconductors by laser radiation based on Thermogradient effect (TGE) is studied. Nanostructures formation of both nanohills and nanocavities are explained by point defects redistribution in gradient of temperature at the irradiated surface. Study of photoluminescence (PL), atomic force microscopy (AFM) and Raman back‐scattering spectra speak in favour of presence of quantum confinement effect (QCE) on the top of nanocones on the irradiated surface of semiconductor single crystals. Aggregation of vacancies under the irradiated surface forms nanocavities. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…At K, two bands are observed in the PL spectra of the samples excited from the Te side of CdTe(111) samples after chemical etching. The peak position of the high-energy band near 1.58 eV corresponds to the bandgap value of CdTe at the liquid nitrogen temperature [21] and the band peaked at 1.45 eV is associated with impurity and point defects [22]- [24].…”

Section: Photoluminescence Measurementsmentioning

confidence: 99%

Characterization of Functional Layers of CdTe Crystals Subjected to Different Surface Treatments

Gnatyuk

Поперенко

Yurgelevych

et al. 2015

IEEE Trans. Nucl. Sci.

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The surface functional layers of commercial detectorgrade CdTe crystals are characterized after different surface treatments such as chemical polishing etching in bromine-containing solutions and laser annealing with nanosecond pulses of the second harmonic of a YAG:Nd laser. The effects of etching and laser irradiation with energy density near the melting threshold of CdTe on the optical properties of the CdTe crystal surface are studied using ellipsometry and photoluminescence (PL). The samples after storage in air are also investigated. The intrinsic emission band at 1.58 eV and broad dopant band peaked at 1.45 eV are observed in the PL spectra excited by a semiconductor laser with wavelength of 405 nm at 80 K. The low energy band is associated with carrier recombination at structural defects in the surface layer. The redistribution of the PL band intensities after chemical polishing is found and it is attributed to transformation of the point defect structure and defect formation in the surface region of CdTe. The laser treatment essentially changes the surface state and structure of the surface layer that can be used for effective modification of characteristics of the functional layers of CdTe crystals particularly band bending before formation of electrical contacts.

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Exciton quantum confinement effect in nanostructures formed by laser radiation on the surface of CdZnTe ternary compound

Cited by 18 publications

References 13 publications

Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method

Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method

Dynamics of nanostructure formation using point defects on semiconductors by laser radiation

Characterization of Functional Layers of CdTe Crystals Subjected to Different Surface Treatments

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