Exciton recombination mechanisms in solution grown single crystalline CsPbBr3 perovskite

Yuan, Youwen; Chen, Mingming; Yang, Shuaiheng; Shen, Xiaojing; Liu, Yuan; Cao, Dawei

doi:10.1016/j.jlumin.2020.117471

Cited by 23 publications

(27 citation statements)

References 57 publications

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“…This is quite different from that in pure CsPbBr 3 nanocrystals and CsPbBr 3 bulk materials, where inverted U-shaped curves have been observed. 24,28 As reported, the CsPbBr 3 perovskites hold the orthorhombic phase without an occurrence of structural phase transition in this temperature range. 29 As a result, the temperature-dependent energy bandgap evolution of CsPbBr 3 is mainly associated with thermal expansion (TE) and electron−phonon (EP) interactions.…”

Section: ■ Results and Discussionsupporting

confidence: 64%

“…For example, the PbBr 2 -rich precursor solution leads to the growth of CsPbBr 3 perovskites. 24 Here, the Cs 4 PbBr 6 single crystals were obtained from a stoichiometric precursor solution, i.e., a molar ratio of CsBr:PbBr 2 = 1:1. Preliminary investigations suggest that the as-grown Cs 4 PbBr 6 single crystals are highly emissive.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…Here, the unrenormalized energy bandgap (E 0 ) is set to be 3.09 eV according to recent optical investigations on CsPbBr 3 bulk materials. 24 The best-fitting results are shown in Figure 4a, giving the parameters as follows: A TE = 0.234 ± 0.005 meV/K, A EP = −758 ± 0.8 meV, and ℏω op = 114.4 ± 1.7 meV. The obtained weight of EP interaction (A EP ) and average optical phonon energy (ℏω op ) are comparable to that in CsPbBr 3 bulk materials (A EP = −763 meV and ℏω op = 128 meV).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…The obtained weight of EP interaction (A EP ) and average optical phonon energy (ℏω op ) are comparable to that in CsPbBr 3 bulk materials (A EP = −763 meV and ℏω op = 128 meV). 24 This means that the optical phonon vibration mode of the Cs 4 PbBr 6 host matrix couples weakly with the electrons in the conduction band of parasitic CsPbBr 3 nanocrystals. In contrast, the weight of the TE interaction (A TE ) increases about 4 times compared to that in CsPbBr 3 bulk materials (A TE = 0.047 meV/K).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs₄PbBr₆ Perovskite Single Crystals

et al. 2021

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Cs4PbBr6 perovskites have attracted much attention recently due to their outstanding optical properties including efficient and narrowband green emission and unexpected high exciton binding energy. In this work, the exciton recombination behaviors in solution-grown Cs4PbBr6 single crystals were investigated via temperature-dependent photoluminescence (PL) spectroscopy in the temperature range of 83–293 K. X-ray diffraction as well as room-temperature PL and absorption investigations suggested that the efficient green emission was attributed to the parasitic CsPbBr3 nanocrystals embedded in the Cs4PbBr6 host matrix. With increasing temperature, the PL spectrum blueshifted and broadened monotonously. In addition, thermal quenching and antiquenching behaviors of PL emission were observed, which involves exciton trapping by CsPbBr3 nanocrystal surface defect states, exciton dissociation, and delocalization of excitons localized at CsPbBr3/Cs4PbBr6 interface states. Accordingly, a schematic model was finally proposed. The results reported in this paper will provide valuable insights into the origination of efficient green emission observed in Cs4PbBr6 perovskites.

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Section: ■ Results and Discussionsupporting

confidence: 64%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

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Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs₄PbBr₆ Perovskite Single Crystals

et al. 2021

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“…In halide perovskites, the role of excitons during emission is controversially discussed. Most likely, for a holistic understanding of the recombination behavior, free charge carrier as well as excitons have to be considered [45][46][47]. The energy of the absorption maximum is only 30 meV higher than the emission maximum.…”

Section: Resultsmentioning

confidence: 99%

Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Sanders

Simkus

Riedel

et al. 2021

Journal of Materials Research

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CsPbBr3 represents a highly attractive material for perovskite light-emitting diodes (PeLEDs) in the green spectral range. However, the lack of deposition tools for reproducible and scalable growth of perovskite films is one of the major obstacles hindering PeLED commercialization. Here, we employ the highly scalable showerhead-assisted chemical vapor deposition (CVD) method to produce uniform pinhole-free CsPbBr3 films for PeLED application. The precursors CsBr and PbBr2 are evaporated under low vacuum in N2 carrier gas. By adjusting the PbBr2 sublimation temperature, process conditions for CsBr-rich, stoichiometric, and PbBr2-rich CsPbBr3 layer growth have been developed. A substrate temperature of 160 °C enables direct growth of these CsPbBr3 films on a polymeric hole transport layer (HTL), finally yielding PeLEDs with a maximum luminance of 125 cd/m2. Although the device efficiency still lags behind solution-processed counterparts, our approach presents the first demonstration of PeLEDs containing CsPbBr3 films processed in a perovskite showerhead-assisted CVD reactor. Graphic abstract

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Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH₃NH₃PbBr₃/p‐Si Heterojunctions

Shen

Yang

Chen

et al. 2022

Adv Materials Inter

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Semiconductor heterojunctions consisting of lead halide perovskite (LHP) and silicon materials are important candidates for the fabrication of self‐powered visible‐light photodetectors. However, the interface recombination caused by interface trap states greatly deteriorates the performance of self‐powered photodetection, but fortunately, it can be suppressed by interfacial engineering. In this work, self‐powered narrowband visible‐light photodetection is demonstrated in the LHP CH3NH3PbBr3/p‐Si heterojunctions. Notably, the self‐powered photodetection performance is greatly enhanced by introducing an atomic‐layer‐deposition‐grown amorphous Al2O3 thin interlayer. Electrical and optical properties measurements suggest that the Al2O3 thin interlayer effectively passivates (reduces) the heterojunction interface trap states. On this basis, the CH3NH3PbBr3/Al2O3/p‐Si heterojunctions exhibit a decreased dark current and increased photocurrent simultaneously compared to CH3NH3PbBr3/p‐Si heterojunctions. Finally, a responsivity as high as 0.39 A W−1 and detectivity as high as 8.45 × 1012 Jones under the bias voltage of 0 V are obtained, which are higher than most reported state‐of‐the‐art devices. The results reported in this work will provide valuable pathways for the fabrication of high‐performance self‐powered narrowband photodetectors based on LHP/Si heterojunctions.

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Exciton recombination mechanisms in solution grown single crystalline CsPbBr3 perovskite

Cited by 23 publications

References 57 publications

Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs₄PbBr₆ Perovskite Single Crystals

Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs₄PbBr₆ Perovskite Single Crystals

Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH₃NH₃PbBr₃/p‐Si Heterojunctions

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Exciton recombination mechanisms in solution grown single crystalline CsPbBr3 perovskite

Cited by 23 publications

References 57 publications

Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs4PbBr6 Perovskite Single Crystals

Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs4PbBr6 Perovskite Single Crystals

Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH3NH3PbBr3/p‐Si Heterojunctions

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Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs₄PbBr₆ Perovskite Single Crystals

Thermal Quenching and Antiquenching of Photoluminescence in Solution-Grown Cs₄PbBr₆ Perovskite Single Crystals

Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH₃NH₃PbBr₃/p‐Si Heterojunctions