Semiconducting (mostly p-doped) single crystals of the 6H-polytype of
α-SiC(0001) were
implanted with 57Fe ions
with a nominal dose of 1.0 × 1016, 2.0 × 1016, 3.0 × 1016
or 2.0 × 1017 cm−2
(high-dose sample p-hd) at 100 or 200 keV ion energy in order to
produce diluted magnetic semiconductors (DMSs). After implantation
all samples (except p-hd) were subject to rapid thermal annealing at
1000 °C
for 2 min. The structure was investigated by x-ray diffraction, high-resolution cross-sectional
transmission electron microscopy and sputter-Auger depth profiling. The magnetic properties
were obtained from superconducting quantum interference device (SQUID) magnetometry and
57Fe
conversion electron Mössbauer spectroscopy (CEMS) at room temperature (RT) and 4.2 K. Our
combined results obtained by several techniques prove unambiguously that ferromagnetism in
57Fe-implanted SiC for Fe concentrations above 3% originates mostly from epitaxial superparamagnetic
Fe3Si (and
possibly a small fraction of Fe nanoparticles) in the SiC matrix. We find a wide range of blocking temperatures,
TB, which start from
400 K for a dose of 2.0 × 1016 cm−2,
and shift downwards to ∼220 K for 3.0 × 1016 cm−2. For the
lowest dose of 1.0 × 1016 cm−2
at 200 keV, we find evidence of ferromagnetism below 20 K via weak magnetic hyperfine
interaction. Our measurements suggest that for a maximum Fe concentration in the
range of 1–3%, which corresponds to this lowest Fe dose, the possibility exists to
obtain a DMS in Fe-implanted SiC, prepared at lower or equal implantation doses.