2002
DOI: 10.1002/1521-3951(200201)229:2<761::aid-pssb761>3.0.co;2-f
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Exciton Spin Injection in CdTe/Cd1-xMnxTe Double Quantum Wells

Abstract: Spin injection processes of excitons were studied by time-resolved photoluminescence in double quantum wells consisting of Cd 0.95 Mn 0.05 Te and CdTe layers. Selective excitation of the magnetic and non-magnetic wells confirms the dominant spin injection process from the magnetic well to the non-magnetic well. The exciton spin injection from the magnetic quantum well of Cd 0.95 Mn 0.05 Te arises with an injection time of 10 ps and induces a transient spin polarization with the degree of 0.20 in the non-magnet… Show more

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Cited by 17 publications
(2 citation statements)
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“…They are promising candidates for efficient spin injection into semiconducting materials in order to fabricate spin-FETs (field effect transistors) and related devices [2]. For example, attempts at electrical and optical spin injection have been made involving GaMnAs, GaMnN, ZnMnSe and CdMnTe [3][4][5][6][7][8][9]. The most striking advantage of these materials, in favour of ferromagnetic metal contacts, is the absence of the resistivity mismatch problem [10] which has to be overcome in the case of metal contacts either by tunnelling barriers or highly doped Schottky barriers [11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…They are promising candidates for efficient spin injection into semiconducting materials in order to fabricate spin-FETs (field effect transistors) and related devices [2]. For example, attempts at electrical and optical spin injection have been made involving GaMnAs, GaMnN, ZnMnSe and CdMnTe [3][4][5][6][7][8][9]. The most striking advantage of these materials, in favour of ferromagnetic metal contacts, is the absence of the resistivity mismatch problem [10] which has to be overcome in the case of metal contacts either by tunnelling barriers or highly doped Schottky barriers [11][12][13][14][15][16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%
“…Exciton tunneling in ZnCdMnSe/ZnSe/ ZnCdSe DQW is spin conserving, 14,15) and exciton spin relaxation time in NMS well is much larger than exciton life time. 16) The þ polarized excitons in the DMS well are expected to transfer to the NMS well via tunneling and relax to the lowest energy state and finally recombine with emission of þ photons. Excitons injected directly in the NMS well are polarized to up-spin ( À ) state due to negative Zeeman splitting in the NMS well, and the À polarized excitons relax to the lowest energy state and recombine with emission of À photons.…”
Section: Pl Intensitymentioning
confidence: 99%