Exciton Transport Phenomena in GaAs Coupled Quantum Wells

Recent Advancement on the Excitonic and Biexcitonic Properties of Low-Dimensional Semiconductors

“…In this context some researchers explained the role of the expansion of indirect excitons (an indirect exciton-IX-is a bound pair of an electron and hole in separated QW layers [89]), which is observed in vdW transition metal dichalcogenide (TMD) heterostructures at room temperature, this study helping for the progress of excitonic devices with energy-productive computation and ideal connection quality for optical communication cases [90,91]. Various theoretical and experimental analyses have been developed for the improvement of the excitonic devices that use IXs propagation in different types of single QWs and coupled QWs [92,93]. Fedichkin and his colleagues [94] studied a novel exciton transport model in a polar (Al, Ga)N/GaN QWs calculating the propagation lengths up to 12 μm at room temperature and up to 20 μm at 10 K.…”

External electric field effect and impact of encapsulating matrix on optical and electronic properties within CdSe/ZnSe core/shell QDs

“…Beyond the scientific benefit, these nanostructures (size varies in the range 1-100 nm) yield the particularity to have their electronic structures very suitable to the engineering of a new generation of optoelectronic devices emphasizing high frequency commutation devices such as Terahertz Infra-Red Photo detectors (THzIRPD) [7,8] thereby medical applications [9,10]. Ingenious and numerous experimental studies have shown the influence of reduction of dimensionality on band structure then on the emission-absorption energies as well as on excitonic transport mechanisms in quantum wells heterostructures [11]. Others determined the intersubband transitions within semiconductor quantum dots (QDs) [12,13] if not manipulating the excitonic spin states [14,15].…”